Ultra-thin high-quality silicon nitride films on Si(111)

EPL

Volumn 94, Issue 1, 2011, Pages

  Falta, J ^a   Schmidt, Th ^a   Gangopadhyay, S ^a,c   Clausen, T ^a   Brunke, O ^a   Flege, J I ^a   Heun, S ^b,d   Bernstorff, S ^b   Gregoratti, L ^b   Kiskinova, M ^b  

^a UNIVERSITY OF BREMEN   (Germany)

^b SINCROTRONE TRIESTE   (Italy)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^d SCUOLA NORMALE SUPERIORE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 79955787361     PISSN: 02955075     EISSN: 12864854     Source Type: Journal    
DOI: 10.1209/0295-5075/94/16003     Document Type: Article

References (50)

1. Stathis J. H. 2002 IBM J. Res. Dev. 46 265
2. Green M. L., Gusev E. P., Degreave R. and Garfunkel E. L. 2001 J. Appl. Phys. 90 2057
3. Hwang H., Ting W., Maiti B., Kwong D.-L. and Lee J. 1990 Appl. Phys. Lett. 57 1010
4. Lu Z. H., Tay S. P., Cao R. and Pianetta P. 1995 Appl. Phys. Lett. 67 2836
5. Cartier E., Buchanan D. A. and Dunn G. J. 1994 Appl. Phys. Lett. 64 901
6. Gusev E. P., Cartier E., Buchanan D. A., Gribelyuk M. A., Copel M., Okorn-Schmidt H. and D'Emic C. 2001 Microelectron. Eng. 59 341
7. Zhao G. L. and Bachlechner M. E. 1998 Phys. Rev. B 58 1887
8. Kim J. W. and Yeom H. W. 2003 Phys. Rev. B 67 035304
9. Shi X., Shriver M., Zhang Z., Higman T. and Campbell S. A. 2004 J. Vac. Sci. Technol. A 22 1146
10. Kobayashi H., Imamura K., ichi Fukayama K., Im S.-S., Maida O., Kim Y.-B., Kim H.-C. and Choi D.-K. 2008 Surf. Sci. 602 1948
11. Nakada Y., Aksenov I. and Okumura H. 1998 Appl. Phys. Lett. 73 827
12. Liu H., Ye Z., Zhang H. and Zhao B. 2000 Mat. Res. Bull. 35 1837
13. Kaiser S., Jakob M., Zweck J., Gebhardt W., Ambacher O., Dimitrov R., Schremer A. T., Smart J. A. and Shealy J. R. 2000 J. Vac. Sci. Technol. B 18 733
14. Gangopadhyay S., Schmidt Th. and Falta J. 2006 Phys. Status Solidi B 243 1416
15. Heckingbottom R. and Wood P. 1972 Surf. Sci. 36 594
16. Kubler L., Bischoff J. L. and Bolmont D. 1988 Phys. Rev. B 38 13113
17. Colaianni M. L., Chen P. J., Nagashima N. and Yates J. T. jr. 1993 J. Appl. Phys. 73 4927
18. Stesmanns A. and Gorp G. V. 1995 Phys. Rev. B 52 8904
19. Bauer E., Wei Y., Müller T., Pavlovska A. and Tsong I. S. T. 1995 Phys. Rev. B 51 17891
20. Yoshimura M., Takahashi E. and Yao T. 1996 J. Vac. Sci. Technol. B 14 1048
21. Zhai G., Yang J., Cue N. and Wang X. 2000 Thin Solid Films 366 121
22. Ahn H., Wu C.-L., Gwo S., Wei C. M. and Chou Y. C. 2001 Phys. Rev. Lett. 86 2818
23. Nishijima M., Kobayashi H., Edamoto K. and Onchi M. 1984 Surf. Sci. 137 473
24. Tokumitsu S., Anazawa T., Ozawa K.-I., Miyazaki E., Edamoto K. and Kato H. 1994 Surf. Sci. 317 143
25. Stober J., Eisenhut B., Rangelov G. and Fauster T. 1994 Surf. Sci. 321 111
26. Ha J. S., Park K.-H., Yun W. S., Lee E.-H. and Park S.-J. 1997 J. Vac. Sci. Technol. B 15 1893
27. Ha J. S., Park K.-H., Yun W. S., Lee E.-H. and Park S.-J. 1998 Appl. Phys. A 66 S495
28. Xu W., Li B., Fujimoto T. and Kojima I. 2001 Surf. Coat. Technol. 135 274
29. Ermolieff A., Bernard P., Marthon S. and Camargo da Costa J. 1986 J. Appl. Phys. 60 3162
30. Bolmont D., Bischoff J. L., Lutz F. and Kubler L. 1992 Surf. Sci. 269/270 924
31. Ha J. S., Park K.-H., Yun W. S., Ko Y.-J. and Kim S. K. 1999 Surf. Sci. 426 373
32. Wang X., Zhai G., Yang J. and Cue N. 1999 Phys. Rev. B 60 R2146
33. Morita Y. and Tokumoto H. 1999 Surf. Sci. 443 L1037
34. Morita Y. and Tokumoto H. 2000 Surf. Sci. 466 L802
35. Gangopadhyay S., Schmidt Th. and Falta J. 2006 e-J. Surf. Sci. Nanotechnol. 4 84
36. Schrott A. G. and Fain S. C. jr. 1981 Surf. Sci. 111 39
37. Schrott A. G. and Fain S. C. jr. 1982 Surf. Sci. 123 204
38. Frahm R., Weigelt J., Meyer G. and Materlik G. 1995 Rev. Sci. Instrum. 66 1677
39. Drube W., Schulte-Schrepping H., Schmidt H.-G., Treusch R. and Materlik G. 1995 Rev. Sci. Instrum. 66 1668
40. Kiskinova M., Marsi M., Fabrizio E. D. and Gentili M. 1999 Surf. Rev. Lett. 6 265
41. Amenitsch H., Bernstorff S., Kriechbaum M., Lombardo D., Mio H., Rappolt M. and Laggner P. 1997 J. Appl. Crystallogr. 30 872
42. Eickhoff T., Medicherla V. and Drube W. 2004 J. Electron Spectrosc. Relat. Phenom. 137-140 85
43. Schmidt Th., Clausen T., Gangopadhyay S., Falta J., Heun S., Gregoratti L., Barinov A., Kaulich B. and Kiskinova M. 2003 Nucl. Instrum. Methods B 200 79
44. Tanuma S., Powell C. J. and Penn D. R. 1991 Surf. Interface Anal. 17 911
45. Tanuma S., Powell C. J. and Penn D. R. 1991 Surf. Interface Anal. 17 927
46. Nevot L. and Croce P. 1980 Rev. Phys. Appl. 15 761
47. Wu C.-Y., King C.-W., Lee M.-K. and Chen C.-T. 1982 J. Electromchem. Soc. 129 1559
48. Hu Y., s. Wang X., Vue N. and Wang X. 2002 J. Phys.: Condens. Matter 14 8939
49. Bahari A., Robenhagen U., Morgen P. and Li Z. S. 2005 Phys. Rev. B 72 205323
50. Falta J. et al in preparation