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Thin Solid Films

Volumn 519, Issue 15, 2011, Pages 5110-5113

Defect passivation by O2 plasma treatment on high-k dielectric HfO2 films at room temperature

(5) Liu, Kou Chen a Tsai, Jung Ruey a Lin, Wen Kai b Li, Chi Shiau a Chen, Jyun Ning a

a CHANG GUNG UNIVERSITY (Taiwan)

b NATIONAL CHUNG HSING UNIVERSITY (Taiwan)

Author keywords

Defect passivation; HfO2; High k; Plasma

Indexed keywords

DEFECT PASSIVATION; DIELECTRIC BREAKDOWN VOLTAGES; GATE LEAKAGES; HFO2; HIGH-K; HIGH-K DIELECTRIC; OXYGEN ATOM; OXYGEN PLASMA TREATMENTS; PLASMA TREATMENT; POLYMER BASED; ROOM TEMPERATURE; SIMPLE METHOD; XPS SPECTRA;

ATOMIC SPECTROSCOPY; DEFECTS; ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; OXYGEN; PASSIVATION; PLASMA DEPOSITION; PLASMAS; SUBSTRATES; THIN FILM DEVICES; THIN FILM TRANSISTORS;

HAFNIUM OXIDES;

EID: 79957630540 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.01.154 Document Type: Conference Paper

Times cited : (20)

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