Interface control and leakage current conduction mechanism in HfO 2 film prepared by pulsed laser deposition

Applied Physics Letters

Volumn 93, Issue 20, 2008, Pages

  Wang, Hao ^a   Wang, Y ^a   Zhang, J ^a   Ye, C ^a   Wang, H B ^a   Feng, J ^a   Wang, B Y ^a   Li, Q ^b   Jiang, Y ^c  

^a HUBEI UNIVERSITY   (China)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^c UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC PROPERTIES; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; FILM PREPARATION; HAFNIUM COMPOUNDS; HEAT CONDUCTION; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LEAKAGE CURRENTS; MICROSCOPIC EXAMINATION; MOS DEVICES; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES;

ANALYSIS RESULTS; CURRENT CONDUCTION MECHANISMS; ELECTRIC CONDUCTIONS; ELECTRICAL MEASUREMENTS; HIGH ELECTRIC FIELDS; HIGH RESOLUTIONS; INTERFACE CONTROLS; INTERFACE LAYERS; INTERFACIAL QUALITIES; POSTANNEALING; PULSED LASERS; SCHOTTKY EMISSIONS; SI SUBSTRATES; SPACE-CHARGE-LIMITED CURRENTS; SUBSTRATE INJECTIONS;

ELECTRIC NETWORK ANALYSIS;

EID: 56849133819     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3033526     Document Type: Article

References (27)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 0021-8979 10.1063/1.1361065 89, 5243 (2001).
2. S. H. Lo, D. A. Buchanan, Y. Taur, and W. Wang, IEEE Electron Device Lett. 0741-3106 10.1109/55.568766 18, 209 (1997).
3. S. Dhar, M. S. R. Rao, S. B. Ogale, D. C. Kundaliya, S. R. Shinde, and T. Venkatesan, Appl. Phys. Lett. 0003-6951 10.1063/1.2142088 87, 241504 (2005).
4. O. Auciello, W. Fan, B. Kabius, S. Saha, J. A. Carlisle, R. P. H. Chang, C. Lopez, E. A. Irene, and R. A. Baragiola, Appl. Phys. Lett. 0003-6951 10.1063/1.1856137 86, 042904 (2005).
5. X. Liu and D. J. Li, Appl. Surf. Sci. 253, 2143 (2006). 0169-4332
6. L. Pereira, P. Barquinha, E. Fortunnato, and R. Martins, Mater. Sci. Semicond. Process. 9, 1125 (2006). 1369-8001
7. Z. B. He, W. D. Wu, H. Xu, J. C. Zhang, and Y. J. Tang, Vacuum 81, 211 (2006). 0042-207X
8. L. Wang, K. Xue, J. B. Xu, A. P. Huang, and P. K. Chu, Appl. Phys. Lett. 0003-6951 10.1063/1.2173708 88, 072903 (2006).
9. J. Morais, L. Miotti, G. V. Soares, S. R. Teixeiira, R. Pezzi, K. P. Bastos, A. L. P. Rotondaro, J. J. Chambers, and M. R. Visokay, Appl. Phys. Lett. 0003-6951 10.1063/1.1515112 81, 2995 (2002).
10. M. Cho, J. H. Kim, and C. S. Hwang, Appl. Phys. Lett. 0003-6951 10.1063/1.2735945 90, 182907 (2007).
11. T. J. Park, J. H. Kim, M. H. Seo, J. H. Jang, and C. S. Hwang, Appl. Phys. Lett. 0003-6951 10.1063/1.2721845 90, 152906 (2007).
12. M. H. Cho, Y. S. Roh, C. N. Whang, K. Jeong, S. W. Nahm, D. H. Ko, J. H. Lee, N. J. Lee, and K. Fujihara, Appl. Phys. Lett. 0003-6951 10.1063/1.1487923 81, 472 (2002).
13. R. Jiang, E. Q. Xie, and Z. F. Wang, Appl. Phys. Lett. 0003-6951 10.1063/1.2358841 89, 142907 (2006).
14. C. T. Tsai, T. C. Chang, K. T. Kin, P. T. Liu, P. Y. Yang, C. F. Weng, and F. S. Huang, J. Appl. Phys. 0021-8979 10.1063/1.2844496 103, 074108 (2008).
15. S. Jeon, C. -J. Choi, T. -Y. Seong, and H. Hwang, Appl. Phys. Lett. 0003-6951 10.1063/1.1385347 79, 245 (2001).
16. M. -H. Cho, K. B. Chung, C. N. Whang, D. -H. Ko, J. H. Lee, and N. I. Lee, Appl. Phys. Lett. 0003-6951 10.1063/1.2202390 88, 202902 (2006).
17. H. Wang, Y. Wang, J. Feng, C. Ye, B. Y. Wang, H. B. Wang, Q. Li, Y. Jiang, A. P. Huang, and Z. S. Xiao, Appl. Phys. A: Mater. Sci. Process. 0947-8396 10.1007/s00339-008-4695-8 93, 681 (2008).
18. P. K. Park and S. W. Kang, Appl. Phys. Lett. 0003-6951 10.1063/1.2387126 89, 192905 (2006).
19. J. Wang, H. Li, and R. Steven, J. Mater. Sci. 0022-2461 10.1007/BF00541601 27, 5397 (1992).
20. S. W. Nam, J. H. Yoo, S. Nam, H. J. Choi, D. W. Lee, D. H. Ko, J. H. Moon, J. H. Ku, and S. Y. Choi, J. Non-Cryst. Solids 0022-3093 10.1016/S0022-3093(02)00976-6 303, 139 (2002).
21. A. P. Huang and P. K. Chu, J. Appl. Phys. 0021-8979 10.1063/1.1922585 97, 114106 (2005).
22. R. Puthenkovilakam, M. Sawkar, and J. P. Chang, Appl. Phys. Lett. 0003-6951 10.1063/1.1927273 86, 202902 (2005).
23. F. C. Chiu, J. Appl. Phys. 0021-8979 10.1063/1.2401657 100, 114102 (2006).
24. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), pp. 402-404.
25. D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1998), pp. 368-387.
26. K. Y. Cheong, J. H. Moon, H. J. Kim, W. Bahng, and N. K. Kim, Appl. Phys. Lett. 0003-6951 10.1063/1.2730731 90, 162113 (2007).
27. S. S. Hullavarad, D. E. Pugel, E. B. Jones, R. D. Vispute, and T. Venkatesan, J. Electron. Mater. 0361-5235 10.1007/s11664-006-0007-2 36, 648 (2007).