메뉴 건너뛰기




Volumn , Issue , 2006, Pages 35-38

Influence of electron-phonon interactions on the electronic transport in nanowire transistors

Author keywords

Electron phonon interactions; Nonequilibrium Green's function formalism; Quantum transport

Indexed keywords

GREEN'S FUNCTION; NANOWIRES; SILICON; TRANSISTORS;

EID: 42549099068     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2006.282832     Document Type: Conference Paper
Times cited : (5)

References (7)
  • 1
    • 0000452993 scopus 로고
    • Diagram technique for nonequilibrium process
    • Apr
    • L. P. Keldysh, "Diagram technique for nonequilibrium process," Sov. Phys. JETP, vol. 20, no. 4, pp. 1018-1026, Apr. 1965.
    • (1965) Sov. Phys. JETP , vol.20 , Issue.4 , pp. 1018-1026
    • Keldysh, L.P.1
  • 3
    • 85080761789 scopus 로고    scopus 로고
    • A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electron-phonon interactions
    • in press
    • S. Jin, Y. J. Park, and H. S. Min, "A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electron-phonon interactions," J. Appl. Phys., in press.
    • J. Appl. Phys
    • Jin, S.1    Park, Y.J.2    Min, H.S.3
  • 4
    • 0001541840 scopus 로고
    • A simple kinetic equation for steady-state quantum transport
    • S. Datta, "A simple kinetic equation for steady-state quantum transport," J. Phys.: Condens. Matter, vol. 2, pp. 8023-8052, 1990.
    • (1990) J. Phys.: Condens. Matter , vol.2 , pp. 8023-8052
    • Datta, S.1
  • 5
    • 35949025517 scopus 로고
    • The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
    • July
    • C. Jacoboni and L. Reggiani, "The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials." Reviews of Modem Physics, vol. 55, no. 3, pp. 645-705, July 1983.
    • (1983) Reviews of Modem Physics , vol.55 , Issue.3 , pp. 645-705
    • Jacoboni, C.1    Reggiani, L.2
  • 7
    • 0347968246 scopus 로고    scopus 로고
    • Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs
    • Dec
    • D. Esseni, A. Abramo, L. Selmi, and E. Sangiorgi, "Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs," IEEE Trans. Electron Devices, vol. 50, no. 12, pp. 2445-2455, Dec. 2003.
    • (2003) IEEE Trans. Electron Devices , vol.50 , Issue.12 , pp. 2445-2455
    • Esseni, D.1    Abramo, A.2    Selmi, L.3    Sangiorgi, E.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.