A new F(ast)-CMS NEGF algorithm for efficient 3D simulations of switching characteristics enhancement in constricted tunnel barrier silicon nanowire MuGFETs

Journal of Computational Electronics

Volumn 8, Issue 3-4, 2009, Pages 287-306

  Afzalian, Aryan ^a   Akhavan, Nima Dehdashti ^a   Lee, Chi Woo ^a   Yan, Ran ^a   Ferain, Isabelle ^a   Razavi, Pedram ^a   Colinge, Jean Pierre ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

MOS devices; Nanowire; NEGF simulations; Quantum effect semiconductor devices; Steep subthreshold slope; Tunnel FET

Indexed keywords

ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; IMPACT IONIZATION; MOS DEVICES; NANOWIRES; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; THREE DIMENSIONAL;

BAND TO BAND TUNNELING; NEGF SIMULATIONS; NON-EQUILIBRIUM GREEN'S FUNCTION; QUANTUM EFFECT SEMICONDUCTOR DEVICES; SUB-THRESHOLD CURRENT; SUBTHRESHOLD SLOPE; SWITCHING CHARACTERISTICS; TUNNEL FET;

ALGORITHMS;

EID: 78649626640     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-009-0283-1     Document Type: Article

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