-
1
-
-
77954033701
-
Variability in Si Nanowire MOSFETs due to the combined effect of interface roughness and random dopants: A fully three-dimensional NEGF simulation study
-
A. Martinez, N. Seoane, and A.R. Brown Variability in Si Nanowire MOSFETs due to the combined effect of interface roughness and random dopants: a fully three-dimensional NEGF simulation study Electron Dev, IEEE Trans 57 7 2010 1626 1635
-
(2010)
Electron Dev, IEEE Trans
, vol.57
, Issue.7
, pp. 1626-1635
-
-
Martinez, A.1
Seoane, N.2
Brown, A.R.3
-
2
-
-
34247330964
-
Developing a full 3D NEGF simulator with random dopant and interface roughness
-
DOI 10.1007/s10825-006-0104-8, Special Issue on the Proceedings of the International Workshop on Computational Electronics (IWCE-11) Part II
-
A. Martinez, J. Barker, and A. Asenov Developing a full 3D NEGF simulator with random dopant and interface roughness J Comput Electron 6 1 2007 215 218 (Pubitemid 46638001)
-
(2007)
Journal of Computational Electronics
, vol.6
, Issue.1-3
, pp. 215-218
-
-
Martinez, A.1
Barker, J.R.2
Asenov, A.3
Svizhenko, A.4
Anantram, M.P.5
-
3
-
-
37249083030
-
Effects of Random Dopant Fluctuations (RDF) on the single event vulnerability of 90 and 65 nm CMOS technologies
-
DOI 10.1109/TNS.2007.908167
-
A. Balasubramanian, P.R. Fleming, and B.L. Bhuva Effects of random dopant fluctuations (RDF) on the single event vulnerability of 90 and 65 nm CMOS technologies Nucl Sci, IEEE Trans 54 6 2007 2400 2406 (Pubitemid 350274097)
-
(2007)
IEEE Transactions on Nuclear Science
, vol.54
, Issue.6
, pp. 2400-2406
-
-
Balasubramanian, A.1
Fleming, P.R.2
Bhuva, B.L.3
Amusan, O.A.4
Massengill, L.W.5
-
4
-
-
0034298158
-
Separation of effects of statistical impurity number fluctuations and position distribution on Vth fluctuations in scaled MOSFETs
-
Y. Yasuda, M. Takamiya, and T. Hiramoto Separation of effects of statistical impurity number fluctuations and position distribution on Vth fluctuations in scaled MOSFETs Electron Dev, IEEE Trans 47 10 2000 1838 1842
-
(2000)
Electron Dev, IEEE Trans
, vol.47
, Issue.10
, pp. 1838-1842
-
-
Yasuda, Y.1
Takamiya, M.2
Hiramoto, T.3
-
5
-
-
51549098014
-
Statistical modeling and simulation of threshold variation under dopant fluctuations and line-edge roughness
-
Anaheim, California
-
Ye Y, Liu F, Nassif S, et al. Statistical modeling and simulation of threshold variation under dopant fluctuations and line-edge roughness. In: Proceedings of the 45th annual design automation conference, Anaheim, California; 2008.
-
(2008)
Proceedings of the 45th Annual Design Automation Conference
-
-
Ye, Y.1
Liu, F.2
Nassif, S.3
-
6
-
-
0042912833
-
Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs
-
A. Asenov, A.R. Brown, and J.H. Davies Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs Electron Dev, IEEE Trans 50 9 2003 1837 1852
-
(2003)
Electron Dev, IEEE Trans
, vol.50
, Issue.9
, pp. 1837-1852
-
-
Asenov, A.1
Brown, A.R.2
Davies, J.H.3
-
7
-
-
0033169519
-
Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1 μm MOSFET's with epitaxial and delta-doped channels
-
A. Asenov, and S. Saini Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1 μm MOSFET's with epitaxial and delta-doped channels Electron Dev, IEEE Trans 46 8 1999 1718 1724
-
(1999)
Electron Dev, IEEE Trans
, vol.46
, Issue.8
, pp. 1718-1724
-
-
Asenov, A.1
Saini, S.2
-
8
-
-
0033749511
-
Statistical 3D 'atomistic' simulation of decanano MOSFETs
-
A. Asenov, G. Slavcheva, and A.R. Brown Statistical 3D 'atomistic' simulation of decanano MOSFETs Superlattices Microstruct 27 2-3 2000 215 227
-
(2000)
Superlattices Microstruct
, vol.27
, Issue.23
, pp. 215-227
-
-
Asenov, A.1
Slavcheva, G.2
Brown, A.R.3
-
9
-
-
38849209164
-
A self-consistent full 3-D real-space NEGF simulator for studying nonperturbative effects in nano-MOSFETs
-
DOI 10.1109/TED.2007.902867
-
A. Martinez, M. Bescond, and J.R. Barker A self-consistent full 3-D real-space NEGF simulator for studying nonperturbative effects in nano-MOSFETs IEEE Trans Electron Dev 54 9 2007 2213 2222 (Pubitemid 351485739)
-
(2007)
IEEE Transactions on Electron Devices
, vol.54
, Issue.9
, pp. 2213-2222
-
-
Martinez, A.1
Bescond, M.2
Barker, J.R.3
Svizhenko, A.4
Anantram, M.P.5
Millar, C.6
Asenov, A.7
-
10
-
-
70349314728
-
3-D Nonequilibrium Green's function simulation of nonperturbative scattering from discrete dopants in the source and drain of a silicon nanowire transistor
-
A. Martinez, N. Seoane, and A.R. Brown 3-D Nonequilibrium Green's function simulation of nonperturbative scattering from discrete dopants in the source and drain of a silicon nanowire transistor IEEE Trans Nanotechnol 8 5 2009 603 610
-
(2009)
IEEE Trans Nanotechnol
, vol.8
, Issue.5
, pp. 603-610
-
-
Martinez, A.1
Seoane, N.2
Brown, A.R.3
-
11
-
-
0035440675
-
Analysis of random dopant-induced effects through numerical solution of randomly perturbed nonlinear Poisson equation
-
DOI 10.1109/20.952565, PII S0018946401078232
-
I.D. Mayergoyz, P. Andrei, and I. Filipovich Analysis of random dopant-induced effects through numerical solution of randomly perturbed nonlinear Poisson equation Magn IEEE Trans 37 5 2001 3155 3158 (Pubitemid 33005967)
-
(2001)
IEEE Transactions on Magnetics
, vol.37
, Issue.5
, pp. 3155-3158
-
-
Mayergoyz, I.D.1
Andrei, P.2
Filipovich, I.3
-
12
-
-
67650127116
-
Current variability in Si Nanowire MOSFETs due to random dopants in the source/drain regions: A fully 3-D NEGF simulation study
-
N. Seoane, A. Martinez, and A.R. Brown Current variability in Si Nanowire MOSFETs due to random dopants in the source/drain regions: a fully 3-D NEGF simulation study IEEE Trans Electron Dev 56 7 2009 1388 1395
-
(2009)
IEEE Trans Electron Dev
, vol.56
, Issue.7
, pp. 1388-1395
-
-
Seoane, N.1
Martinez, A.2
Brown, A.R.3
-
13
-
-
4344606224
-
A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation
-
J. Wang, E. Polizzi, and M. Lundstrom A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation J Appl Phys 96 4 2004 2192 2203
-
(2004)
J Appl Phys
, vol.96
, Issue.4
, pp. 2192-2203
-
-
Wang, J.1
Polizzi, E.2
Lundstrom, M.3
-
14
-
-
33748300947
-
Quantum transport in two- and three-dimensional nanoscale transistors: Coupled mode effects in the nonequilibrium Green's function formalism
-
M. Luisier, A. Schenk, and W. Fichtner Quantum transport in two- and three-dimensional nanoscale transistors: coupled mode effects in the nonequilibrium Green's function formalism J Appl Phys 100 4 2006
-
(2006)
J Appl Phys
, vol.100
, Issue.4
-
-
Luisier, M.1
Schenk, A.2
Fichtner, W.3
-
15
-
-
78649626640
-
A new F(ast)-CMS NEGF algorithm for efficient 3D simulations of switching characteristics enhancement in constricted tunnel barrier silicon nanowire MuGFETs
-
A. Afzalian, N.D. Akhavan, and C.W. Lee A new F(ast)-CMS NEGF algorithm for efficient 3D simulations of switching characteristics enhancement in constricted tunnel barrier silicon nanowire MuGFETs J Comput Electron 8 3-4 2009 287 306
-
(2009)
J Comput Electron
, vol.8
, Issue.34
, pp. 287-306
-
-
Afzalian, A.1
Akhavan, N.D.2
Lee, C.W.3
-
16
-
-
0034291813
-
Nanoscale device modeling: The Green's function method
-
DOI 10.1006/spmi.2000.0920
-
S. Datta Nanoscale device modeling: the Green's function method Superlattices Microstruct 28 4 2000 253 278 (Pubitemid 32031130)
-
(2000)
Superlattices and Microstructures
, vol.28
, Issue.4
, pp. 253-278
-
-
Datta, S.1
-
17
-
-
56049124554
-
Sensitivity of trigate MOSFETs to random dopant induced threshold voltage fluctuations
-
R. Yan, D. Lynch, and T. Cayron Sensitivity of trigate MOSFETs to random dopant induced threshold voltage fluctuations Solid-State Electron 52 12 2008 1872 1876
-
(2008)
Solid-State Electron
, vol.52
, Issue.12
, pp. 1872-1876
-
-
Yan, R.1
Lynch, D.2
Cayron, T.3
-
18
-
-
84858080761
-
Influence of single-atom impurity scattering on quantum transport in silicon nanowire transistors
-
January 17-19, Granada, Spain. Conference proceedings; 2011
-
Akhavan ND, Ferain I, Yan R, et al. Influence of single-atom impurity scattering on quantum transport in silicon nanowire transistors. In: VII Workshop of the European network on silicon on insulator technologies (EUROSOI-2011), January 17-19, 2011, Granada, Spain. Conference proceedings; 2011. p. 79-80.
-
(2011)
VII Workshop of the European Network on Silicon on Insulator Technologies (EUROSOI-2011)
, pp. 79-80
-
-
Akhavan, N.D.1
Ferain, I.2
Yan, R.3
-
19
-
-
79953077972
-
Influence of elastic and inelastic electron-phonon interaction on quantum transport in multigate silicon nanowire MOSFETs
-
N.D. Akhavan, A. Afzalian, and I. Ferain Influence of elastic and inelastic electron-phonon interaction on quantum transport in multigate silicon nanowire MOSFETs IEEE Trans Electron Dev 58 4 2011
-
(2011)
IEEE Trans Electron Dev
, vol.58
, Issue.4
-
-
Akhavan, N.D.1
Afzalian, A.2
Ferain, I.3
-
20
-
-
78649547972
-
Dissipative transport in multigate silicon nanowire transistors
-
Dehdashti N, Kranti A, Ferain I, et al. Dissipative transport in multigate silicon nanowire transistors. In: Simulation of semiconductor processes and devices (SISPAD), 2010. In: International conference on, Bologna, Italy; 2010. p. 97-100.
-
(2010)
Simulation of Semiconductor Processes and Devices (SISPAD), 2010. In: International Conference On, Bologna, Italy
, pp. 97-100
-
-
Dehdashti, N.1
Kranti, A.2
Ferain, I.3
-
21
-
-
78751694152
-
Emission and absorption of optical phonons in multigate silicon nanowire MOSFETs
-
Dehdashti N, Kranti A, Ferain I, et al. Emission and absorption of optical phonons in multigate silicon nanowire MOSFETs. In: Computational electronics (IWCE), 2010 14th international workshop on, Pisa, Italy; 2010. p. 1-4.
-
(2010)
Computational Electronics (IWCE), 2010 14th International Workshop On, Pisa, Italy
, pp. 1-4
-
-
Dehdashti, N.1
Kranti, A.2
Ferain, I.3
-
22
-
-
79952632435
-
Improvement of carrier ballisticity in junctionless nanowire transistors
-
N.D. Akhavan, I. Ferain, and P. Razavi Improvement of carrier ballisticity in junctionless nanowire transistors Appl Phys Lett 98 10 2011
-
(2011)
Appl Phys Lett
, vol.98
, Issue.10
-
-
Akhavan, N.D.1
Ferain, I.2
Razavi, P.3
-
23
-
-
77955883760
-
Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxide-semiconductor field-effect transistors
-
N.D. Akhavan, A. Afzalian, and C.W. Lee Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxide-semiconductor field-effect transistors J Appl Phys 108 3 2010
-
(2010)
J Appl Phys
, vol.108
, Issue.3
-
-
Akhavan, N.D.1
Afzalian, A.2
Lee, C.W.3
-
24
-
-
33745711573
-
A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electron-phonon interactions
-
S. Jin, Y.J. Park, and H.S. Min A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electron-phonon interactions J Appl Phys 99 12 2006
-
(2006)
J Appl Phys
, vol.99
, Issue.12
-
-
Jin, S.1
Park, Y.J.2
Min, H.S.3
-
25
-
-
59049100697
-
Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale planar MOSFET and bulk FinFET devices
-
Y. Li, C.-H. Hwang, and H.-W. Cheng Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale planar MOSFET and bulk FinFET devices Microelectron Eng 86 3 2009 277 282
-
(2009)
Microelectron Eng
, vol.86
, Issue.3
, pp. 277-282
-
-
Li, Y.1
Hwang, C.-H.2
Cheng, H.-W.3
-
26
-
-
78650121941
-
Effect of source/drain doping gradient on threshold voltage variation in double-gate fin field effect transistors as determined by discrete random doping
-
D.-h. Moon, J.-J. Song, and O. Kim Effect of source/drain doping gradient on threshold voltage variation in double-gate fin field effect transistors as determined by discrete random doping Jpn J Appl Phys 49 10 2010
-
(2010)
Jpn J Appl Phys
, vol.49
, Issue.10
-
-
Moon, D.-H.1
Song, J.-J.2
Kim, O.3
-
27
-
-
33646088366
-
Engineering source/drain extension regions in nanoscale double gate (DG) SOI MOSFETs: Analytical model and design considerations
-
A. Kranti, and G. Alastair Armstrong Engineering source/drain extension regions in nanoscale double gate (DG) SOI MOSFETs: analytical model and design considerations Solid-State Electron 50 3 2006 437 447
-
(2006)
Solid-State Electron
, vol.50
, Issue.3
, pp. 437-447
-
-
Kranti, A.1
Alastair Armstrong, G.2
-
28
-
-
52649096841
-
Discrete-dopant-induced characteristic fluctuations in 16nm multiple-gate silicon-on-insulator devices
-
084509-084509-6
-
Y. Li, and C.-H. Hwang Discrete-dopant-induced characteristic fluctuations in 16nm multiple-gate silicon-on-insulator devices J Appl Phys 102 8 2007 084509-084509-6
-
(2007)
J Appl Phys
, vol.102
, Issue.8
-
-
Li, Y.1
Hwang, C.-H.2
|