3-D nonequilibrium green's function simulation of nonperturbative scattering from discrete dopants in the source and drain of a silicon nanowire transistor

IEEE Transactions on Nanotechnology

Volumn 8, Issue 5, 2009, Pages 603-610

  Martinez, Antonio ^a   Seoane, Natalia ^b   Brown, Andrew R ^a   Barker, John R ^a   Asenov, Asen ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b UNIVERSITY OF SANTIAGO DE COMPOSTELA   (Spain)

Author keywords

Discrete dopants; Nanowire transistor; Nonequilibrium Green x2019; s function (NEGF); Numerical simulation; Quantum transport; Variations

Indexed keywords

DISCRETE DOPANTS; NANOWIRE TRANSISTOR; NUMERICAL SIMULATION; QUANTUM TRANSPORT; VARIATIONS;

DIFFERENTIAL EQUATIONS; GREEN'S FUNCTION; NANOWIRES; POISSON EQUATION; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; RESONANCE; THREE DIMENSIONAL; TRANSISTORS;

DOPING (ADDITIVES);

EID: 70349314728     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2009.2020980     Document Type: Article

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