Influence of elastic and inelastic electronphonon interaction on quantum transport in multigate silicon nanowire MOSFETs

IEEE Transactions on Electron Devices

Volumn 58, Issue 4, 2011, Pages 1029-1037

  Akhavan, Nima Dehdashti ^a   Afzalian, Aryan ^b   Kranti, Abhinav ^a   Ferain, Isabelle ^a   Lee, Chi Woo ^a   Yan, Ran ^a   Razavi, Pedram ^a   Yu, Ran ^a   Colinge, Jean Pierre ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

Device simulation; inelastic optical phonons; multigate nanowire transistor; nonequilibrium Green's function (NEGF); quantum transport

Indexed keywords

DEVICE SIMULATIONS; INELASTIC OPTICAL PHONONS; MULTIGATE NANOWIRE TRANSISTOR; NONEQUILIBRIUM GREEN'S FUNCTION (NEGF); QUANTUM TRANSPORT;

BORN APPROXIMATION; DIFFERENTIAL EQUATIONS; ELECTRIC WIRE; NANOWIRES; PHONONS; QUANTUM ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS;

QUANTUM CHEMISTRY;

EID: 79953077972     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2107521     Document Type: Article

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