Inelastic phonon scattering in graphene FETs

IEEE Transactions on Electron Devices

Volumn 58, Issue 11, 2011, Pages 3997-4003

  Chauhan, Jyotsna ^a   Guo, Jing ^a  

^a University of Florida   (United States)

Author keywords

Boltzmann transport equation (BTE); graphene field effect transistor; intrinsic cutoff frequency; semiclassical transport; surface polar phonon scattering

Indexed keywords

AMBIPOLAR TRANSPORT; ANALOG ELECTRONICS; BOLTZMANN TRANSPORT EQUATION; CARRIER INJECTION; GATE VOLTAGES; HIGH MOBILITY; IMPURITY SCATTERING; INTRINSIC CUTOFF FREQUENCY; LOW FIELD; LOW FIELD MOBILITY; PHASE SPACES; PHYSICAL MECHANISM; SATURATION REGIME; SEMICLASSICAL TRANSPORT; VOLTAGE RANGES;

BOLTZMANN EQUATION; CUTOFF FREQUENCY; EXPERIMENTS; MESFET DEVICES; PERIODIC STRUCTURES; PHASE SPACE METHODS; PHONON SCATTERING; PHONONS;

GRAPHENE;

EID: 80054926743     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2164253     Document Type: Article

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