Variability in Si nanowire MOSFETs due to the combined effect of interface roughness and random dopants: A fully three-dimensional NEGF simulation study

IEEE Transactions on Electron Devices

Volumn 57, Issue 7, 2010, Pages 1626-1635

  Martinez, Antonio ^a   Seoane, Natalia ^b   Brown, Andrew R ^a   Barker, John R ^a   Asenov, Asen ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b UNIVERSITY OF SANTIAGO DE COMPOSTELA   (Spain)

Author keywords

Discrete random dopants; mobility; non equilibrium green functions; resonances; silicon nanowire FET; surface roughness

Indexed keywords

COMBINED EFFECT; CURRENT VARIABILITY; DEVICE PERFORMANCE; ELECTRON WAVE; INTERFACE ROUGHNESS; MICROSCOPIC FEATURES; MICROSCOPIC PATTERNS; MOBILITY; NANO-METER-SCALE; NON-EQUILIBRIUM GREEN FUNCTIONS; NON-EQUILIBRIUM GREEN'S FUNCTION FORMALISM; ON-CURRENTS; QUASI-BOUND STATE; RANDOM DOPANTS; RESONANT STATE; RESONANT STRUCTURES; ROUGH INTERFACES; SI NANOWIRE; SILICON NANOWIRE FETS; SIMULATION STUDIES; SMALL CHANNELS; SOURCE/DRAIN REGIONS; STRONG CORRELATION; THICKNESS FLUCTUATIONS; THRESHOLD VOLTAGE SHIFTS; TRANSISTOR PERFORMANCE;

FIELD EFFECT TRANSISTORS; GREEN'S FUNCTION; INTERFACES (MATERIALS); LEAD; MESFET DEVICES; METAL ANALYSIS; NANOWIRES; RESONANCE; SCATTERING; SEMICONDUCTING SILICON COMPOUNDS; SMELTING; SURFACE PROPERTIES; SURFACE ROUGHNESS; THREE DIMENSIONAL; THRESHOLD VOLTAGE;

DOPING (ADDITIVES);

EID: 77954033701     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2048405     Document Type: Article

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