Semiclassical transport in silicon nanowire FETs including surface roughness

Journal of Computational Electronics

Volumn 7, Issue 3, 2008, Pages 355-358

  Lenzi, M ^a   Gnudi, A ^a   Reggiani, S ^a   Gnani, E ^a   Rudan, M ^a   Baccarani, G ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

Boltzmann transport equation; Low field mobility; Silicon nanowire; Surface roughness scattering

Indexed keywords

BOLTZMANN EQUATION; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; MESFET DEVICES; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; POISSON EQUATION; SILICON; SURFACE PROPERTIES; SURFACE ROUGHNESS;

BOLTZMANN TRANSPORT EQUATION; LOW-FIELD MOBILITY; SILICON NANOWIRE; SILICON-NANOWIRE FETS; SURFACE ROUGHNESS SCATTERING;

METAL ANALYSIS;

EID: 50949116543     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-008-0245-z     Document Type: Article

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