-
1
-
-
33646271349
-
-
0741-3106, 10.1109/LED.2006.873381
-
N. Singh, A. Agarwal, L. K. Bera, T. Y. Liow, R. Yang, S. C. Rustagi, C. H. Tung, R. Kumar, G. Q. Lo, N. Balasubramanian, and D. L. Kwong, IEEE Electron Device Lett. 0741-3106 27, 383 (2006). 10.1109/LED.2006.873381
-
(2006)
IEEE Electron Device Lett.
, vol.27
, pp. 383
-
-
Singh, N.1
Agarwal, A.2
Bera, L.K.3
Liow, T.Y.4
Yang, R.5
Rustagi, S.C.6
Tung, C.H.7
Kumar, R.8
Lo, G.Q.9
Balasubramanian, N.10
Kwong, D.L.11
-
3
-
-
56549107714
-
-
0018-9383, 10.1109/TED.2008.2008011
-
J. Appenzeller, J. Knoch, M. I. Bjork, H. Riel, H. Schmid, and W. Riess, IEEE Trans. Electron Devices 0018-9383 55, 2827 (2008). 10.1109/TED.2008.2008011
-
(2008)
IEEE Trans. Electron Devices
, vol.55
, pp. 2827
-
-
Appenzeller, J.1
Knoch, J.2
Bjork, M.I.3
Riel, H.4
Schmid, H.5
Riess, W.6
-
4
-
-
70350626912
-
-
1009-2757, 10.1007/s11432-009-0167-9
-
R. Huang, H. M. Wu, J. F. Kang, D. Y. Xiao, X. L. Shi, X. An, Y. Tian, R. S. Wang, L. L. Zhang, X. Zhang, and Y. Wang, Sci. China Ser. F, Inf. Sci. 1009-2757 52, 1491 (2009). 10.1007/s11432-009-0167-9
-
(2009)
Sci. China Ser. F, Inf. Sci.
, vol.52
, pp. 1491
-
-
Huang, R.1
Wu, H.M.2
Kang, J.F.3
Xiao, D.Y.4
Shi, X.L.5
An, X.6
Tian, Y.7
Wang, R.S.8
Zhang, L.L.9
Zhang, X.10
Wang, Y.11
-
5
-
-
4344606224
-
-
0021-8979, 10.1063/1.1769089
-
J. Wang, E. Polizzi, and M. Lundstrom, J. Appl. Phys. 0021-8979 96, 2192 (2004). 10.1063/1.1769089
-
(2004)
J. Appl. Phys.
, vol.96
, pp. 2192
-
-
Wang, J.1
Polizzi, E.2
Lundstrom, M.3
-
6
-
-
77955883760
-
-
0021-8979, 10.1063/1.3457848
-
N. Dehdashti Akhavan, A. Afzalian, C. W. Lee, R. Yan, I. Ferain, P. Razavi, R. Yu, G. Fagas, and J. P. Colinge, J. Appl. Phys. 0021-8979 108, 034510 (2010). 10.1063/1.3457848
-
(2010)
J. Appl. Phys.
, vol.108
, pp. 034510
-
-
Dehdashti Akhavan, N.1
Afzalian, A.2
Lee, C.W.3
Yan, R.4
Ferain, I.5
Razavi, P.6
Yu, R.7
Fagas, G.8
Colinge, J.P.9
-
7
-
-
33745711573
-
A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electron-phonon interactions
-
DOI 10.1063/1.2206885
-
S. Jin, Y. J. Park, and H. S. Min, J. Appl. Phys. 0021-8979 99, 123719 (2006). 10.1063/1.2206885 (Pubitemid 44000417)
-
(2006)
Journal of Applied Physics
, vol.99
, Issue.12
, pp. 123719
-
-
Jin, S.1
Park, Y.J.2
Min, H.S.3
-
8
-
-
70349648619
-
-
0021-8979, 10.1063/1.3226856
-
S. Barraud, J. Appl. Phys. 0021-8979 106, 063714 (2009). 10.1063/1.3226856
-
(2009)
J. Appl. Phys.
, vol.106
, pp. 063714
-
-
Barraud, S.1
-
9
-
-
56549121570
-
-
0018-9383, 10.1109/TED.2008.2005178
-
E. Gnani, A. Gnudi, S. Reggiani, and G. Baccarani, IEEE Trans. Electron Devices 0018-9383 55, 2918 (2008). 10.1109/TED.2008.2005178
-
(2008)
IEEE Trans. Electron Devices
, vol.55
, pp. 2918
-
-
Gnani, E.1
Gnudi, A.2
Reggiani, S.3
Baccarani, G.4
-
10
-
-
27844528513
-
Phonon-assisted ballistic to diffusive crossover in silicon nanowire transistors
-
DOI 10.1063/1.2120890, 094303
-
M. J. Gilbert, R. Akis, and D. K. Ferry, J. Appl. Phys. 0021-8979 98, 094303 (2005). 10.1063/1.2120890 (Pubitemid 41653747)
-
(2005)
Journal of Applied Physics
, vol.98
, Issue.9
, pp. 1-8
-
-
Gilbert, M.J.1
Akis, R.2
Ferry, D.K.3
-
11
-
-
49249122744
-
-
0018-9383, 10.1109/TED.2008.926230
-
M. Lenzi, P. Palestri, E. Gnani, S. Reggiani, A. Gnudi, D. Esseni, L. Selmi, and G. Baccarani, IEEE Trans. Electron Devices 0018-9383 55, 2086 (2008). 10.1109/TED.2008.926230
-
(2008)
IEEE Trans. Electron Devices
, vol.55
, pp. 2086
-
-
Lenzi, M.1
Palestri, P.2
Gnani, E.3
Reggiani, S.4
Gnudi, A.5
Esseni, D.6
Selmi, L.7
Baccarani, G.8
-
12
-
-
77949275137
-
-
1748-3387, 10.1038/nnano.2010.15
-
J. P. Colinge, C. W. Lee, A. Afzalian, N. Dehdashti Akhavan, R. Yan, I. Ferain, P. Razavi, B. O'Neill, A. Blake, M. White, A. M. Kelleher, B. McCarthy, and R. Murphy, Nat. Nanotechnol. 1748-3387 5, 225 (2010). 10.1038/nnano.2010.15
-
(2010)
Nat. Nanotechnol.
, vol.5
, pp. 225
-
-
Colinge, J.P.1
Lee, C.W.2
Afzalian, A.3
Dehdashti Akhavan, N.4
Yan, R.5
Ferain, I.6
Razavi, P.7
O'Neill, B.8
Blake, A.9
White, M.10
Kelleher, A.M.11
McCarthy, B.12
Murphy, R.13
-
13
-
-
77949665564
-
-
0003-6951, 10.1063/1.3358131
-
C. W. Lee, A. N. Nazarov, I. Ferain, N. Dehdashti Akhavan, R. Yan, P. Razavi, R. Yu, R. T. Doria, and J. P. Colinge, Appl. Phys. Lett. 0003-6951 96, 102106 (2010). 10.1063/1.3358131
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 102106
-
-
Lee, C.W.1
Nazarov, A.N.2
Ferain, I.3
Dehdashti Akhavan, N.4
Yan, R.5
Razavi, P.6
Yu, R.7
Doria, R.T.8
Colinge, J.P.9
-
14
-
-
77249173867
-
-
0003-6951, 10.1063/1.3299014
-
J. P. Colinge, C. W. Lee, I. Ferain, N. Dehdashti Akhavan, R. Yan, P. Razavi, R. Yu, A. N. Nazarov, and R. T. Doriac, Appl. Phys. Lett. 0003-6951 96, 073510 (2010). 10.1063/1.3299014
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 073510
-
-
Colinge, J.P.1
Lee, C.W.2
Ferain, I.3
Dehdashti Akhavan, N.4
Yan, R.5
Razavi, P.6
Yu, R.7
Nazarov, A.N.8
Doriac, R.T.9
-
15
-
-
76349089165
-
-
0038-1101, 10.1016/j.sse.2009.12.003
-
C. W. Lee, I. Ferain, A. Afzalian, R. Yan, N. Dehdashti Akhavan, P. Razavi, and J. P. Colinge, Solid-State Electron. 0038-1101 54, 97 (2010). 10.1016/j.sse.2009.12.003
-
(2010)
Solid-State Electron.
, vol.54
, pp. 97
-
-
Lee, C.W.1
Ferain, I.2
Afzalian, A.3
Yan, R.4
Dehdashti Akhavan, N.5
Razavi, P.6
Colinge, J.P.7
-
16
-
-
59849089910
-
-
0003-6951, 10.1063/1.3079411
-
C. W. Lee, A. Afzalian, N. Dehdashti Akhavan, R. Yan, I. Ferain, and J. P. Colinge, Appl. Phys. Lett. 0003-6951 94, 053511 (2009). 10.1063/1.3079411
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 053511
-
-
Lee, C.W.1
Afzalian, A.2
Dehdashti Akhavan, N.3
Yan, R.4
Ferain, I.5
Colinge, J.P.6
-
17
-
-
79953100208
-
-
(IEEE, Pisa, Italy)
-
N. Dehdashti Akhava, A. Kranti, I. Ferain, C. W. Lee, Y. Ran, P. Razavi, R. Yu, and J. R. Colinge, 14th International Workshop on Computational Electronics (IWCE) (IEEE, Pisa, Italy, 2010), pp. 1-4.
-
(2010)
14th International Workshop on Computational Electronics (IWCE)
, pp. 1-4
-
-
Dehdashti Akhava, N.1
Kranti, A.2
Ferain, I.3
Lee, C.W.4
Ran, Y.5
Razavi, P.6
Yu, R.7
Colinge, J.R.8
-
20
-
-
78650921901
-
-
0018-9383, 10.1109/TED.2010.2084390
-
N. Dehdashti Akhavan, A. Afzalian, I. Ferain, A. Kranti, C. W. Lee, Y. Ran, P. Razavi, R. Yu, and J. R. Colinge, IEEE Trans. Electron Devices 0018-9383 58, 26 (2011). 10.1109/TED.2010.2084390
-
(2011)
IEEE Trans. Electron Devices
, vol.58
, pp. 26
-
-
Dehdashti Akhavan, N.1
Afzalian, A.2
Ferain, I.3
Kranti, A.4
Lee, C.W.5
Ran, Y.6
Razavi, P.7
Yu, R.8
Colinge, J.R.9
-
21
-
-
35348858675
-
Experimental study on electron mobility in ultrathin-body silicon-on-insulator metal-oxide-semiconductor field-effect transistors
-
DOI 10.1063/1.2785957
-
K. Uchida, J. Koga, and S. Takagib, J. Appl. Phys. 0021-8979 102, 074510 (2007). 10.1063/1.2785957 (Pubitemid 47587888)
-
(2007)
Journal of Applied Physics
, vol.102
, Issue.7
, pp. 074510
-
-
Uchida, K.1
Koga, J.2
Takagi, S.-I.3
|