Sensitivity of trigate MOSFETs to random dopant induced threshold voltage fluctuations

Solid-State Electronics

Volumn 52, Issue 12, 2008, Pages 1872-1876

  Yan, Ran ^a   Lynch, Danny ^a,b   Cayron, Thibault ^a,c   Lederer, Dimitri ^a   Afzalian, Aryan ^a   Lee, Chi Woo ^a   Dehdashti, Nima ^a   Colinge, J P ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b UNIVERSITY COLLEGE CORK   (Ireland)

^c GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

3D simulation; Doping fluctuations; Silicon on insulator (SOI); Trigate FETs

Indexed keywords

ATOMIC PHYSICS; ATOMS; ELECTRON BEAM LITHOGRAPHY; MOSFET DEVICES; RANDOM PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON; THREE DIMENSIONAL; THREE DIMENSIONAL COMPUTER GRAPHICS; THRESHOLD VOLTAGE;

3D SIMULATION; CHANNEL REGIONS; CONTINUITY EQUATIONS; DOPING ATOMS; DOPING FLUCTUATIONS; DOPING IMPURITIES; FILM DOPING; IMPLANTATION PROCESSES; IMPURITY DOPING; MOS FETS; RANDOM DOPANT INDUCED THRESHOLD VOLTAGE FLUCTUATIONS; SILICON-ON-INSULATOR (SOI); TRI GATES; TRIGATE FETS; TRIGATE MOSFET; UNDOPED CHANNELS;

DOPING (ADDITIVES);

EID: 56049124554     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.06.061     Document Type: Article

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