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Journal of Applied Physics

Volumn 107, Issue 9, 2010, Pages

Single donor induced negative differential resistance in silicon n-type nanowire metal-oxide-semiconductor transistors

(4) Bescond, M a Lannoo, M a Raymond, L a Michelini, F a

a AIX MARSEILLE UNIVERSITÉ (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL CALCULATION; ANTIRESONANT; DONOR STATE; DRAIN VOLTAGE; METAL-OXIDE-SEMICONDUCTOR TRANSISTOR; NEGATIVE DIFFERENTIAL RESISTANCES; NON-EQUILIBRIUM GREEN'S FUNCTION; NOVEL DEVICES; SILICON NANOWIRE TRANSISTORS; SINGLE DONOR; THEORETICAL STUDY; TRANSISTOR PERFORMANCE;

DIFFERENTIATION (CALCULUS); GREEN'S FUNCTION; NANOWIRES; NEGATIVE RESISTANCE; SEMICONDUCTING SILICON; TRANSPORT PROPERTIES;

TRANSISTORS;

EID: 79251481116 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3399999 Document Type: Article

Times cited : (35)

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