Low temperature solution-processed InZnO thin-film transistors

Journal of the Electrochemical Society

Volumn 157, Issue 4, 2010, Pages

  Koo, Chang Young ^a,b   Song, Keunkyu ^a   Jun, Taehwan ^a   Kim, Dongjo ^a   Jeong, Youngmin ^a   Kim, Seung Hyun ^b   Ha, Jowoong ^b   Moon, Jooho ^a  

^a Yonsei University   (South Korea)

^b INOSTEK Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH FIELD; INDIUM ZINC OXIDES; LOW TEMPERATURE SOLUTIONS; LOW THRESHOLD VOLTAGE; ON/OFF CURRENT RATIO; OUTPUT CHARACTERISTICS; ROOT MEAN SQUARE ROUGHNESS; SMOOTH SURFACE; SWITCHING BEHAVIORS;

AMORPHOUS FILMS; DRAIN CURRENT; INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 77949691054     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3298886     Document Type: Article

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