Erratum: Structure, sodium ion role, and practical issues for β-Alumina as a high-k solution-processed gate layer for transparent and low-voltage electronics (ACS Appl. Mater. Interfaces (2011) 3: 11 (4254-4261) DOI: 10.1021/am2009103);Structure, sodium ion role, and practical issues for β-alumina as a high-k solution-processed gate layer for transparent and low-voltage electronics

ACS Applied Materials and Interfaces

Volumn 3, Issue 11, 2011, Pages 4254-4261

  Zhang, Bo ^a   Liu, Yu ^a   Agarwala, Shweta ^a   Yeh, Ming Ling ^a   Katz, Howard E ^a  

^a Whiting School of Engineering   (United States)

Author keywords

and transistor; dielectric; low voltage; oxide semiconductor; sodium beta alumina; transparent electronic

Indexed keywords

ALUMINA; ALUMINUM OXIDE; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; METAL IONS; OXIDE SEMICONDUCTORS; OXYGEN SENSORS; SODIUM; THRESHOLD VOLTAGE; TIN OXIDES;

BETA ALUMINA; DEGREE OF CRYSTALLINITY; FIELD EFFECT TRANSISTOR (FETS); HIGH DIELECTRIC CONSTANTS; LOW VOLTAGES; THRESHOLD VOLTAGE SHIFTS; TRANSPARENT ELECTRONICS; ZINC-TIN-OXIDE (ZTO);

HIGH-K DIELECTRIC;

EID: 84870416293     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am502139y     Document Type: Erratum

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