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Volumn 17, Issue 13, 2007, Pages 2117-2124

Solution-processed HafSOx and ZircSOx inorganic thin-film dielectrics and nanolaminates

(8) Anderson, Jeremy T a Munsee, Craig L b Hung, Celia M b Phung, Tran M c Herman, Gregory S d Johnson, David C c Wager, John F b Keszler, Douglas A a

a OREGON STATE UNIVERSITY (United States)

b Oregon State University (United States)

c UNIVERSITY OF OREGON (United States)

d HEWLETT PACKARD COMPANY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; HAFNIUM COMPOUNDS; HEAT TREATMENT; LAMINATES; NANOSTRUCTURED MATERIALS; PERMITTIVITY; SPIN COATING; SYNTHESIS (CHEMICAL);

FACILE GELATION; GATE-LEAKAGE CURRENTS; METAL CAPACITOR; NANOLAMINATE; ORGANIC ADDITIVES; X-RAY REFLECTIVITY;

THIN FILMS;

EID: 34548552840 PISSN: 1616301X EISSN: 16163028 Source Type: Journal
DOI: 10.1002/adfm.200601135 Document Type: Article

Times cited : (108)

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