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Applied Physics Letters

Volumn 96, Issue 24, 2010, Pages

Solution-processed zinc-tin oxide thin-film transistors with low interfacial trap density and improved performance

(2) Lee, Chen Guan a Dodabalapur, Ananth a

a The University of Texas at Austin (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS OXIDE SEMICONDUCTORS; ANNEALING PROCESS; CHANNEL MATERIALS; DIELECTRIC/SEMICONDUCTOR INTERFACE; INTERFACIAL TRAPS; LOW-COST ELECTRONICS; ON/OFF RATIO; OPERATIONAL STABILITY; PERFORMANCE VARIATIONS; PRE-BAKE PROCESS; PRECURSOR FILMS; SOLUTION-PROCESSED; SUBTHRESHOLD SWING; THERMAL DISTRIBUTIONS;

AMORPHOUS FILMS; TIN; TITANIUM COMPOUNDS; ZINC;

THIN FILM TRANSISTORS;

EID: 77953771294 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3454241 Document Type: Article

Times cited : (122)

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