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Journal of Materials Chemistry

Volumn 21, Issue 29, 2011, Pages 10649-10652

High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol-gel method

(2) Avis, Christophe a Jang, Jin a

a Kyung Hee University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; ALUMINUM CHLORIDES; ALUMINUM OXIDES; BREAKDOWN ELECTRICAL FIELD; FIELD-EFFECT MOBILITIES; PROCESS TEMPERATURE; SATURATION REGION; SOLUTION-PROCESSED;

ALUMINUM; CHLORINE COMPOUNDS; COATINGS; GATE DIELECTRICS; GATES (TRANSISTOR); SOL-GEL PROCESS; TIN;

THIN FILM TRANSISTORS;

EID: 79960361246 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c1jm12227d Document Type: Article

Times cited : (215)

References (22)

1
- 9744248669
- K. Nomura H. Ohta A. Takagi T. Kamiya M. Hirano H. Hosono Nature 2004 432 488
- (2004) Nature , vol.432 , pp. 488
- Nomura, K.¹ Ohta, H.² Takagi, A.³ Kamiya, T.⁴ Hirano, M.⁵ Hosono, H.⁶

2
- 0038362743
- K. Nomura H. Ohta K. Ueda T. Kamiya M. Hirano H. Hosono Science 2003 300 1269
- (2003) Science , vol.300 , pp. 1269
- Nomura, K.¹ Ohta, H.² Ueda, K.³ Kamiya, T.⁴ Hirano, M.⁵ Hosono, H.⁶

3
- 54549110006
- G. H. Kim H. S. Shin K. H. Kim W. J. Park Y. J. Choi B. D. Ahn H. J. Kim Dig. Tech. Pap. - Soc. Inf. Disp. Int. Symp. 2008 39 1258
- (2008) Dig. Tech. Pap. - Soc. Inf. Disp. Int. Symp. , vol.39 , pp. 1258
- Kim, G.H.¹ Shin, H.S.² Kim, K.H.³ Park, W.J.⁴ Choi, Y.J.⁵ Ahn, B.D.⁶ Kim, H.J.⁷

4
- 78951480081
- C. Avis J. Jang Electrochem. Solid-State Lett. 2011 14 J9
- (2011) Electrochem. Solid-State Lett. , vol.14 , pp. 9
- Avis, C.¹ Jang, J.²

5
- 78650292470
- K. K. Banger Y. Yamashita K. Mori R. L. Peterson T. Leedham J. Rickard H. Sirringhaus Nat. Mater. 2011 10 45
- (2011) Nat. Mater. , vol.10 , pp. 45
- Banger, K.K.¹ Yamashita, Y.² Mori, K.³ Peterson, R.L.⁴ Leedham, T.⁵ Rickard, J.⁶ Sirringhaus, H.⁷

6
- 77950192258
- S. Jeong Y.-G. Ha J. Moon A. Facchetti T. J. Marks Adv. Mater. 2010 22 1346
- (2010) Adv. Mater. , vol.22 , pp. 1346
- Jeong, S.¹ Ha, Y.-G.² Moon, J.³ Facchetti, A.⁴ Marks, T.J.⁵

7
- 70349929799
- D. Kim Y. Jeong K. Song S.-K. Park G. Cao J. Moon Langmuir 2009 25 11149
- (2009) Langmuir , vol.25 , pp. 11149
- Kim, D.¹ Jeong, Y.² Song, K.³ Park, S.-K.⁴ Cao, G.⁵ Moon, J.⁶

8
- 77953000529
- D. Kim Y. Jeong C. Y. Koo K. Song J. Moon Jpn. J. Appl. Phys. 2010 49 05EB06
- (2010) Jpn. J. Appl. Phys. , vol.49
- Kim, D.¹ Jeong, Y.² Koo, C.Y.³ Song, K.⁴ Moon, J.⁵

9
- 77953162588
- J. Liu D. B. Buchholz R. P. H. Chang A. Facchetti T. J. Marks Adv. Mater. 2010 22 2333
- (2010) Adv. Mater. , vol.22 , pp. 2333
- Liu, J.¹ Buchholz, D.B.² Chang, R.P.H.³ Facchetti, A.⁴ Marks, T.J.⁵

10
- 70350468172
- B. N. Pal B. M. Dhar K. C. See H. E. Katz Nat. Mater. 2009 8 898
- (2009) Nat. Mater. , vol.8 , pp. 898
- Pal, B.N.¹ Dhar, B.M.² See, K.C.³ Katz, H.E.⁴

11
- 77953771294
- C.-G. Lee A. Dodabalapur Appl. Phys. Lett. 2010 96 243501
- (2010) Appl. Phys. Lett. , vol.96 , pp. 243501
- Lee, C.-G.¹ Dodabalapur, A.²

12
- 53649092548
- D.-H. Cho S. Yang C. Byun J. Shin M. K. Ryu S.-H. K. Park C.-S. Hwang S. M. Chung W.-S. Cheong S. M. Yoon Hye-Yong. Chu Appl. Phys. Lett. 2008 93 142111
- (2008) Appl. Phys. Lett. , vol.93 , pp. 142111
- Cho, D.-H.¹ Yang, S.² Byun, C.³ Shin, J.⁴ Ryu, M.K.⁵ Park, S.-H.K.⁶ Hwang, C.-S.⁷ Chung, S.M.⁸ Cheong, W.-S.⁹ Yoon, S.M.¹⁰ Chu, H.-Y.¹¹

13
- 33847111592
- H. Klauk U. Zschieschang J. Pflaum M. Halik Nature 2007 445 745
- (2007) Nature , vol.445 , pp. 745
- Klauk, H.¹ Zschieschang, U.² Pflaum, J.³ Halik, M.⁴

14
- 0042341502
- P. D. Ye G. D. Wilk B. Yang J. Kwo S. N. G. Chu S. Nakahara H.-J. L. Gossmann J. P. Mannaerts M. Hong K. K. Ng J. Bude Appl. Phys. Lett. 2003 83 180
- (2003) Appl. Phys. Lett. , vol.83 , pp. 180
- Ye, P.D.¹ Wilk, G.D.² Yang, B.³ Kwo, J.⁴ Chu, S.N.G.⁵ Nakahara, S.⁶ Gossmann, H.-J.L.⁷ Mannaerts, J.P.⁸ Hong, M.⁹ Ng, K.K.¹⁰ Bude, J.¹¹

15
- 34547938514
- S. T. Meyers J. T. Anderson D. Hong C. M. Hung J. F. Wager D. A. Keszler Chem. Mater. 2007 19 4023
- (2007) Chem. Mater. , vol.19 , pp. 4023
- Meyers, S.T.¹ Anderson, J.T.² Hong, D.³ Hung, C.M.⁴ Wager, J.F.⁵ Keszler, D.A.⁶

16
- 67249086653
- J. D.-H. Lee S.-Y. Han G. S. Hermanc C.-H. Chang J. Mater. Chem. 2009 19 3135
- (2009) J. Mater. Chem. , vol.19 , pp. 3135
- Lee, J.D.-H.¹ Han, S.-Y.² Hermanc, G.S.³ Chang, C.-H.⁴

17
- 1242320224
- M. D. Groner F. H. Fabreguette J. W. Elam S. M. George Chem. Mater. 2004 16 639
- (2004) Chem. Mater. , vol.16 , pp. 639
- Groner, M.D.¹ Fabreguette, F.H.² Elam, J.W.³ George, S.M.⁴

18
- 40549133529
- S. Van Elshocht A. Hardy C. Adelmann M. Caymax T. Conard A. Franquet O. Richard M. K. Van Bael J. Mullens S. De Gendt J. Electrochem. Soc. 2008 155 G91
- (2008) J. Electrochem. Soc. , vol.155 , pp. 91
- Van Elshocht, S.¹ Hardy, A.² Adelmann, C.³ Caymax, M.⁴ Conard, T.⁵ Franquet, A.⁶ Richard, O.⁷ Van Bael, M.K.⁸ Mullens, J.⁹ De Gendt, S.¹⁰

19
- 77957234556
- J. Triska J. F. Conley Jr. R. Presley J. F. Wager J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.-Process., Meas., Phenom. 2010 28 C5I1
- (2010) J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.-Process., Meas., Phenom. , vol.28
- Triska, J.¹ Conley, Jr.J.F.² Presley, R.³ Wager, J.F.⁴

20
- 33947313009
- Y.-J. Chang D.-H. Lee G. S. Herman C.-H. Chang Electrochem. Solid-State Lett. 2007 10 H135
- (2007) Electrochem. Solid-State Lett. , vol.10 , pp. 135
- Chang, Y.-J.¹ Lee, D.-H.² Herman, G.S.³ Chang, C.-H.⁴

21
- 33846965196
- P. Görrn P. Hölzer T. Riedl W. Kowalsky J. Wang T. Weimann P. Hinze S. Kipp Appl. Phys. Lett. 2007 90 063502
- (2007) Appl. Phys. Lett. , vol.90 , pp. 063502
- Görrn, P.¹ Hölzer, P.² Riedl, T.³ Kowalsky, W.⁴ Wang, J.⁵ Weimann, T.⁶ Hinze, P.⁷ Kipp, S.⁸

22
- 70449711200
- P. T. Erslev E. S. Sundholm R. E. Presley D. Hong J. F. Wager J. D. Cohen Appl. Phys. Lett. 2009 95 192115
- (2009) Appl. Phys. Lett. , vol.95 , pp. 192115
- Erslev, P.T.¹ Sundholm, E.S.² Presley, R.E.³ Hong, D.⁴ Wager, J.F.⁵ Cohen, J.D.⁶

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