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Volumn 5, Issue 9, 2012, Pages 1602-1625

Time dependent dielectric breakdown in copper low-k interconnects: Mechanisms and reliability models

Author keywords

Interconnect dielectric breakdown; Low k dielectric; Reliability; Soft breakdown

Indexed keywords

BREAKDOWN MECHANISM; COPPER MIGRATION; DAMASCENE INTERCONNECTS; DIELECTRIC LEAKAGE; DIELECTRIC RELIABILITY; E-MODEL; HARD BREAKDOWN; INTERCONNECT DIELECTRICS; INTRINSIC BREAKDOWN; LOW FIELD; LOW K DIELECTRICS; LOW-K INTERCONNECTS; LOW-K MATERIALS; PHYSICAL ASSUMPTIONS; POOLE-FRENKEL; POROUS ULTRA LOW-K; RELIABILITY MODEL; SCHOTTKY EMISSIONS; SOFT BREAKDOWN; TIME DEPENDENT DIELECTRIC BREAKDOWN;

EID: 84869990893     PISSN: None     EISSN: 19961944     Source Type: Journal    
DOI: 10.3390/ma5091602     Document Type: Review
Times cited : (57)

References (59)
  • 1
    • 33747557398 scopus 로고    scopus 로고
    • High-performance interconnects: An integration overview
    • Havemann, R.H.; Hutchby, J.A. High-performance interconnects: An integration overview. Proc. IEEE 2001, 89, 586-601.
    • (2001) Proc. IEEE , vol.89 , pp. 586-601
    • Havemann, R.H.1    Hutchby, J.A.2
  • 2
    • 84870009946 scopus 로고    scopus 로고
    • High density plasma chemical vapor deposition of fluorinated silicon oxide for low-k dielectric applications
    • High density plasma chemical vapor deposition of fluorinated silicon oxide for low-k dielectric applications Singapore 28-29 November
    • Teh, Y.W.; Wong, T.K.S.; Sudijono, J.; See, A. High density plasma chemical vapor deposition of fluorinated silicon oxide for low-k dielectric applications. In Proceedings of SPIE International Symposium of Microelectronics and Assembly, Singapore, 28-30 November 2000.
    • (2000) Proceedings of SPIE International Symposium of Microelectronics and Assembly
    • Teh, Y.W.1    Wong, T.K.S.2    Sudijono, J.3    See, A.4
  • 3
    • 0038591740 scopus 로고    scopus 로고
    • Rusli Atomic structure and defect densities in low dielectric constant SiOCH films deposited by plasma-enhanced chemical vapor deposition
    • Ligatchev, V.; Wong, T.K.S.; Liu, B.; Rusli. Atomic structure and defect densities in low dielectric constant SiOCH films deposited by plasma-enhanced chemical vapor deposition. J. Appl. Phys. 2002, 92, 4605-4611.
    • (2002) J. Appl. Phys. , vol.92 , pp. 4605-4611
    • Ligatchev, V.1    Wong, T.K.S.2    Liu, B.3
  • 4
    • 4344675331 scopus 로고    scopus 로고
    • Investigation of deposition effect on properties of PECVD deposited SiOCH
    • Wong, T.K.S.; Liu, B.; Narayana, B.; Ligatchev, V.; Kumar, R. Investigation of deposition effect on properties of PECVD deposited SiOCH. Thin Solid Films 2004, 462, 156-160.
    • (2004) Thin Solid Films , vol.462 , pp. 156-160
    • Wong, T.K.S.1    Liu, B.2    Narayana, B.3    Ligatchev, V.4    Kumar, R.5
  • 5
    • 4344603758 scopus 로고    scopus 로고
    • Investigation of thermal and oxygen plasma stability of mesoporous methylsilsesquioxane low-k films by X-ray reflectivity and small angle scattering
    • Goh, T.K.; Wong, T.K.S. Investigation of thermal and oxygen plasma stability of mesoporous methylsilsesquioxane low-k films by X-ray reflectivity and small angle scattering. Microelectron. Eng. 2004, 75, 330-343.
    • (2004) Microelectron. Eng. , vol.75 , pp. 330-343
    • Goh, T.K.1    Wong, T.K.S.2
  • 6
    • 0031256462 scopus 로고    scopus 로고
    • Organic and inorganic spin-on polymers for low-dielectric-constant applications
    • Hacker, N.P. Organic and inorganic spin-on polymers for low-dielectric-constant applications. MRS Bull. 1997, 22, 33-38.
    • (1997) MRS Bull , vol.22 , pp. 33-38
    • Hacker, N.P.1
  • 8
    • 2942525279 scopus 로고    scopus 로고
    • Synthesis and characterization of templating low dielectric constant organosilicate films
    • Yu, S.; Wong, T.K.S.; Hu, X.; Pita, K. Synthesis and characterization of templating low dielectric constant organosilicate films. J. Electrochem. Soc. 2004, 151, F123-F127.
    • (2004) J. Electrochem. Soc. , vol.151
    • Yu, S.1    Wong, T.K.S.2    Hu, X.3    Pita, K.4
  • 9
    • 0032162553 scopus 로고    scopus 로고
    • Low dielectric constant materials and methods for interlayer dielectric films in ultralarge-cale integrated circuit multilevel interconnections
    • Homma, T. Low dielectric constant materials and methods for interlayer dielectric films in ultralarge-cale integrated circuit multilevel interconnections. Mater. Sci. Eng. 1998, R23, 243-285.
    • (1998) Mater. Sci. Eng. , vol.R23 , pp. 243-285
    • Homma, T.1
  • 13
    • 67650935869 scopus 로고    scopus 로고
    • Porous pSiCOH ultra low-k dielectrics for chip interconnects prepared by PECVD
    • Gill, A. Porous pSiCOH ultra low-k dielectrics for chip interconnects prepared by PECVD. Annu. Rev. Mater. Res. 2009, 39, 49-69.
    • (2009) Annu. Rev. Mater. Res. , vol.39 , pp. 49-69
    • Gill, A.1
  • 14
    • 79959393815 scopus 로고    scopus 로고
    • Low-dielectric constant insulators for future integrated circuits and packages
    • Kohl, P.A. Low-dielectric constant insulators for future integrated circuits and packages. Annu. Rev. Chem. Biomol. Eng. 2011, 2, 379-401.
    • (2011) Annu. Rev. Chem. Biomol. Eng. , vol.2 , pp. 379-401
    • Kohl, P.A.1
  • 16
    • 84870965531 scopus 로고    scopus 로고
    • The International Technology Roadmap for Semiconductors (accessed on 10 June 2012)
    • The International Technology Roadmap for Semiconductors 2009. Available online: http://www.itrs.net (accessed on 10 June 2012).
    • (2009)
  • 17
    • 0036610919 scopus 로고    scopus 로고
    • Ultrathin gate oxide reliability: Physical models, statistics, and characterization
    • Suehle, J. Ultrathin gate oxide reliability: Physical models, statistics, and characterization. IEEE Trans. Electron. Devices 2002, 49, 958-971.
    • (2002) IEEE Trans. Electron. Devices , vol.49 , pp. 958-971
    • Suehle, J.1
  • 18
    • 0033742736 scopus 로고    scopus 로고
    • Molecular model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics and the reliability implications for hyper-thin gate oxide
    • McPherson, J.W.; Khamankar, R.B. Molecular model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics and the reliability implications for hyper-thin gate oxide. Semicond. Sci. Technol. 2000, 15, 462-470.
    • (2000) Semicond. Sci. Technol. , vol.15 , pp. 462-470
    • McPherson, J.W.1    Khamankar, R.B.2
  • 20
    • 27744543911 scopus 로고    scopus 로고
    • Simple model for time-dependent dielectric breakdown in inter- and intralevel low-k dielectrics
    • 084109:1-:184109
    • Lloyd, J.R.; Liniger, E.; Shaw, T.M. Simple model for time-dependent dielectric breakdown in inter- and intralevel low-k dielectrics. J. Appl. Phys. 2005, 98, 084109:1-084109:10.
    • (2005) J. Appl. Phys. , vol.98
    • Lloyd, J.R.1    Liniger, E.2    Shaw, T.M.3
  • 23
    • 61449257455 scopus 로고    scopus 로고
    • A model for electric degradation of interconnect low-k dielectrics in microelectronic integrated circuits
    • 044908:1-:144908
    • Haase, G.S. A model for electric degradation of interconnect low-k dielectrics in microelectronic integrated circuits. J. Appl. Phys. 2009, 105, 044908:1-044908:10.
    • (2009) J. Appl. Phys. , vol.105
    • Haase, G.S.1
  • 24
    • 3042806767 scopus 로고    scopus 로고
    • Modeling of time-dependent dielectric breakdown in copper metallization
    • Wu, W.; Duan, X.; Yuan, J.S. Modeling of time-dependent dielectric breakdown in copper metallization. IEEE Trans. Device Mater. Relia. 2003, 3, 26-30.
    • (2003) IEEE Trans. Device Mater. Relia. , vol.3 , pp. 26-30
    • Wu, W.1    Duan, X.2    Yuan, J.S.3
  • 27
    • 36849094893 scopus 로고    scopus 로고
    • A time dependent dielectric breakdown model for field accelerated low-k breakdown due to copper ions
    • Achanta, R.S.; Plawsky, J.L.; Gill, W.N. A time dependent dielectric breakdown model for field accelerated low-k breakdown due to copper ions. Appl. Phys. Lett. 2007, 91, 234106:1-234106:3.
    • (2007) Appl. Phys. Lett. , vol.91
    • Achanta, R.S.1    Plawsky, J.L.2    Gill, W.N.3
  • 28
  • 30
    • 26344462977 scopus 로고
    • On pre-breakdown phenomena in insulators and electronic semiconductors
    • Frenkel, J. On pre-breakdown phenomena in insulators and electronic semiconductors. Phys. Rev. 1938, 54, 647-648.
    • (1938) Phys. Rev. , vol.54 , pp. 647-648
    • Frenkel, J.1
  • 31
    • 0242552155 scopus 로고    scopus 로고
    • Recent advances on electromigration in very-large-scale-integration of interconnects
    • Tu, K.N. Recent advances on electromigration in very-large-scale-integration of interconnects. J. Appl. Phys. 2003, 94, 5451-5473.
    • (2003) J. Appl. Phys. , vol.94 , pp. 5451-5473
    • Tu, K.N.1
  • 32
    • 0036892397 scopus 로고    scopus 로고
    • Electromigration reliability issues in dual-damascene Cu interconnections
    • Ogawa, E.T.; Lee, K.-D.; Blaschke, V.A.; Ho, P.S. Electromigration reliability issues in dual-damascene Cu interconnections. IEEE Trans. Relia. 2002, 51, 403-419.
    • (2002) IEEE Trans. Relia. , vol.51 , pp. 403-419
    • Ogawa, E.T.1    Lee, K.-D.2    Blaschke, V.A.3    Ho, P.S.4
  • 33
    • 1242264919 scopus 로고    scopus 로고
    • Leakage and breakdown mechanism of Cu comb capacitors with bilayer-structured α-SiCN/α-SiC Cu-cap barriers
    • Chiang, C.-C.; Ko, I.-H.; Chen, M.-C.; Wu, Z.-C.; Lu, Y.-C.; Jang, S.-M.; Liang, M.-S. Leakage and breakdown mechanism of Cu comb capacitors with bilayer-structured α-SiCN/α-SiC Cu-cap barriers. J. Electrochem. Soc. 2004, 151, G93-G97.
    • (2004) J. Electrochem. Soc. , vol.151
    • Chiang, C.-C.1    Ko, I.-H.2    Chen, M.-C.3    Wu, Z.-C.4    Lu, Y.-C.5    Jang, S.-M.6    Liang, M.-S.7
  • 35
    • 4944265056 scopus 로고    scopus 로고
    • Improvement in leakage current and breakdown field of Cu-comb capacitor using a silicon oxycarbide dielectric barrier
    • Chiang, C.-C.; Ko, I.-H.; Chen, M.C.; Wu, Z.-C.; Lu, Y.-C.; Jang, S.-M.; Liang, M.-S. Improvement in leakage current and breakdown field of Cu-comb capacitor using a silicon oxycarbide dielectric barrier. J. Electrochem. Soc. 2004, 151, G606-G611.
    • (2004) J. Electrochem. Soc. , vol.151
    • Chiang, C.-C.1    Ko, I.-H.2    Chen, M.C.3    Wu, Z.-C.4    Lu, Y.-C.5    Jang, S.-M.6    Liang, M.-S.7
  • 38
    • 0028430427 scopus 로고
    • Hole injection SiO2 breakdown model for very low voltage lifetime extrapolation
    • Schuegraf, K.F.; Hu, C. Hole injection SiO2 breakdown model for very low voltage lifetime extrapolation. IEEE Trans. Electron Devices 1994, 41, 761-767.
    • (1994) IEEE Trans. Electron Devices , vol.41 , pp. 761-767
    • Schuegraf, K.F.1    Hu, C.2
  • 40
    • 0003438540 scopus 로고
    • 3rd ed.; Cornell University Press: Ithaca, NY, USA
    • Pauling, L. The Nature of the Chemical Bond, 3rd ed.; Cornell University Press: Ithaca, NY, USA, 1960; pp. 320-331.
    • (1960) The Nature of the Chemical Bond , pp. 320-331
    • Pauling, L.1
  • 41
    • 3142563208 scopus 로고    scopus 로고
    • Determination of the nature of molecular bonding in silica from time-dependent dielectric breakdown data
    • McPherson, J.W. Determination of the nature of molecular bonding in silica from time-dependent dielectric breakdown data. J. Appl. Phys. 2004, 95, 8101-8109.
    • (2004) J. Appl. Phys. , vol.95 , pp. 8101-8109
    • McPherson, J.W.1
  • 42
    • 0030719061 scopus 로고    scopus 로고
    • Oxide breakdown mechanism and quantum physical chemistry for time-dependent dielectric breakdown
    • CO, USA 8-10 April
    • Kimura, M. Oxide breakdown mechanism and quantum physical chemistry for time-dependent dielectric breakdown. In Proceedings of the 35th Annual International Reliability Physics Symposium, Denver, CO, USA; 8-10 April 1997.
    • (1997) Proceedings of the 35th Annual International Reliability Physics Symposium
    • Kimura, M.1
  • 46
    • 1142276078 scopus 로고    scopus 로고
    • 1/2 model for silicon nitride MIM capacitor
    • 1/2 model for silicon nitride MIM capacitor. Microelectron. Rel. 2004, 44, 411-423.
    • (2004) Microelectron. Rel. , vol.44 , pp. 411-423
    • Allers, K.-H.1
  • 47
  • 50
    • 34247192017 scopus 로고    scopus 로고
    • The electric field dependence of Cu migration induced dielectric failure in interlayer dielectric for integrated circuits
    • 074501:1-:174501
    • Hwang, S.-S.; Jung, S.-Y.; Joo, Y.-C. The electric field dependence of Cu migration induced dielectric failure in interlayer dielectric for integrated circuits. J. Appl. Phys. 2007, 101, 074501:1-074501:6.
    • (2007) J. Appl. Phys. , vol.101
    • Hwang, S.-S.1    Jung, S.-Y.2    Joo, Y.-C.3
  • 51
    • 24944438302 scopus 로고    scopus 로고
    • Effect of pore interconnection on Cu-diffusion-induced failures in porous spin-on low-k dielectrics
    • 111915:1111915:3
    • Hwang, S.-S.; Lee, H.-C.; Ro, H.W.; Yoon, D.Y.; Joo, Y.-C. Effect of pore interconnection on Cu-diffusion-induced failures in porous spin-on low-k dielectrics. Appl. Phys. Lett. 2005, 87, 111915:1-111915:3.
    • (2005) Appl. Phys. Lett. , vol.87
    • Hwang, S.-S.1    Lee, H.-C.2    Ro, H.W.3    Yoon, D.Y.4    Joo, Y.-C.5
  • 52
    • 78650736717 scopus 로고    scopus 로고
    • Cu penetration into low-k dielectric during deposition and bias-temperature stress
    • 252901:1-:1252901
    • He, M.; Novak, S.; Vanamurthy, L.; Bakhru, H.; Plawsky, J.; Lu, T.-M. Cu penetration into low-k dielectric during deposition and bias-temperature stress. Appl. Phys. Lett. 2010, 97, 252901:1-252901:3.
    • (2010) Appl. Phys. Lett. , vol.97
    • He, M.1    Novak, S.2    Vanamurthy, L.3    Bakhru, H.4    Plawsky, J.5    Lu, T.-M.6
  • 53
    • 84858297174 scopus 로고    scopus 로고
    • Effects of Cu surface roughness on TDDB for direct polishing ultra-low k dielectric Cu interconnects at 40 nm technology node and beyond
    • Lin, W.C.; Lin, J.; Tsai, T.C.; Hsu, C.M.; Liu, C.C.; Lin, J.F.; Hwang, C.C.; Wu, J.Y. Effects of Cu surface roughness on TDDB for direct polishing ultra-low k dielectric Cu interconnects at 40 nm technology node and beyond. Microelectron. Eng. 2012, 92, 115-118.
    • (2012) Microelectron. Eng. , vol.92 , pp. 115-118
    • Lin, W.C.1    Lin, J.2    Tsai, T.C.3    Hsu, C.M.4    Liu, C.C.5    Lin, J.F.6    Hwang, C.C.7    Wu, J.Y.8
  • 55
    • 79251554418 scopus 로고    scopus 로고
    • Direct observation of the 1/E dependence of time dependent dielectric breakdown in the presence of copper
    • 023107:1-:123107
    • Zhao, L.; Tokei, Z.; Croes, K.; Wilson, C.J.; Baklanov, M.; Beyer, G.P.; Claeys, C. Direct observation of the 1/E dependence of time dependent dielectric breakdown in the presence of copper. Appl. Phys. Lett. 2011, 98, 023107:1-023107:3.
    • (2011) Appl. Phys. Lett. , vol.98
    • Zhao, L.1    Tokei, Z.2    Croes, K.3    Wilson, C.J.4    Baklanov, M.5    Beyer, G.P.6    Claeys, C.7
  • 56
    • 77956833185 scopus 로고    scopus 로고
    • Soft breakdown characteristics of ultralow-k time-dependent dielectric breakdown for advanced complementary metal-oxide semiconductor technologies
    • 054107:1-:154107
    • Chen, F.; Shinosky, M. Soft breakdown characteristics of ultralow-k time-dependent dielectric breakdown for advanced complementary metal-oxide semiconductor technologies. J. Appl. Phys. 2010, 108, 054107:1-054107:7.
    • (2010) J. Appl. Phys. , vol.108
    • Chen, F.1    Shinosky, M.2


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