A time dependent dielectric breakdown model for field accelerated low- k breakdown due to copper ions

Applied Physics Letters

Volumn 91, Issue 23, 2007, Pages

  Achanta, Ravi S ^a   Plawsky, Joel L ^a   Gill, William N ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COPPER; COPPER COMPOUNDS; ELECTRIC FIELD EFFECTS; METAL IONS; SILICA;

BOND BREAKAGE; BREAKDOWN STRENGTH; COPPER IONS;

ELECTRIC BREAKDOWN;

EID: 36849094893     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2823576     Document Type: Article

References (17)

1. R. Gonella, Microelectron. Eng. 55, 245 (2001).
2. J. R. Lloyd, C. E. Murray, S. Ponoth, S. Cohen, and E. G. Liniger, Microelectron. Reliab. 46, 1643 (2006).
3. F. Chen, O. Bravo, K. Chanda, P. McLaughlin, T. Sullivan, J. Gill, L. Lloyd, R. Kontra, and J. Aitken, Proceedings of the International Reliability Physics Symposium (IEEE, New York, 2006), p. 46.
4. N. Suzumura, S. Yamamoto, D. Kodama, K. Makabe, J. Komori, E. Murakami, S. Maegawa, and K. Kubota, Proceedings of the International Reliability Physics Symposium (IEEE, New York, 2006), p. 484.
5. J. W. McPherson and H. C. Mogul, J. Appl. Phys. 84, 1513 (1998).
6. I. C. Chen, S. Holland, and C. Hu, Proceedings of the International Reliability Physics Symposium (IEEE, New York, 1985), p. 24.
7. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (J. Wiley, New York, 1981).
8. B. G. Willis and D. V. Lang, Thin Solid Films 467, 284 (2004).
9. J.-Y. Kwon, K.-S. Kim, Y.-C. Joo, and K.-B. Kim, Jpn. J. Appl. Phys., Part 2 41, L99 (2002).
10. K.-S. Kim, Y.-C. Joo, J.-Y. Kwon, and K.-B. Kim, J. Appl. Phys. 100, 063517 (2006).
11. R. S. Achanta, W. N. Gill, and J. L. Plawsky, " Copper Ion Drift in Integrated Circuits: Effect of Boundary Conditions on Reliability and Breakdown of Low-k dielectrics.. " J. Appl. Phys. (to be published).
12. A. L. S. Loke, C. Ryu, C. P. Yue, J. S. H. Cho, and S. S. Wong, IEEE Electron Device Lett. 17, 549 (1996).
13. T. Hoernig, K. Melzer, U. Schubert, H. Geisler, J. W. Bartha, Proceedings of the International Interconnect Technology Conference (IEEE, New York, 2000), pp. 211-213.
14. J. Cluzel, F. Mondon, D. Blachier, Y. Morand, L. Martel, and G. Reimbold, Proceedings of the International Reliability Physics Symposium (IEEE, New York, 2003), p. 431.
15. C. M. Osburn and S. I. Raider, J. Electrochem. Soc. 120, 1369 (1973).
16. S.-S. Hwang, S.-Y. Jung, and Y.-C. Joo, J. Appl. Phys. 101, 074501 (2007).
17. J. D. McBrayer, R. M. Swanson, and T. W. Sigmon, J. Electrochem. Soc. 133, 1242 (1986).