Improvement in leakage current and breakdown field of Cu-comb capacitor using a silicon oxycarbide dielectric barrier

Journal of the Electrochemical Society

Volumn 151, Issue 9, 2004, Pages

  Chiang, Chiu Chih ^a   Ko, I Hsiu ^a   Chen, Mao Chieh ^a   Wu, Zhen Cheng ^b   Lu, Yung Cheng ^b   Jang, Syun Ming ^b   Liang, Mong Song ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL MECHANICAL POLISHING; COMPOSITION; DENSITY (OPTICAL); DIELECTRIC FILMS; ELECTRIC FIELD EFFECTS; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

DIELECTRIC BARRIERS; ELECTROMIGRATION RESISTANCE; ETCHING STOP LAYER (ESL); RESISTANCE-CAPACITANCE (RC) DELAY;

MOS CAPACITORS;

EID: 4944265056     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1777510     Document Type: Article

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