Leakage and Breakdown Mechanisms of Cu Comb Capacitors with Bilayer-Structured α-SiCN/α-SiC Cu-Cap Barriers

Journal of the Electrochemical Society

Volumn 151, Issue 2, 2004, Pages

  Chiang, Chiu Chih ^a   Ko, I Hsiu ^a   Chen, Mao Chieh ^a   Wu, Zhen Cheng ^b   Lu, Yung Cheng ^b   Jang, Syun Ming ^b   Liang, Mong Song ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; COPPER; DEFECTS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; PHOTORESISTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; SILICON COMPOUNDS;

BREAKDOWN MECHANISMS; COMB CAPACITORS;

CAPACITORS;

EID: 1242264919     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1639169     Document Type: Article

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