TDDB Reliability Improvement of Cu Damascene with a Bilayer-Structured α-SiC:H Dielectric Barrier

Journal of the Electrochemical Society

Volumn 151, Issue 2, 2004, Pages

  Chiang, Chiu Chih ^a   Chen, Mao Chieh ^a   Wu, Zhen Cheng ^b   Li, Lain Jong ^b   Jang, Syun Ming ^b   Yu, Chen Hua ^b   Liang, Mong Song ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; COPPER; DEPOSITION; HYDROGEN; LEAKAGE CURRENTS; METALLIZING; PHOTORESISTS; RELIABILITY; SILICON CARBIDE; THIN FILMS;

BARRIER LAYERS; DAMASCENE;

DIELECTRIC MATERIALS;

EID: 1242264921     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1637358     Document Type: Article

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