E- and √E-model too conservative to describe low field time dependent dielectric breakdown

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 543-548

  Croes, K ^a   Tokei, Z S ^a  

^a IMEC   (Belgium)

Author keywords

BEOL; Copper; Low field; Low k; TDDB

Indexed keywords

BEOL; DISTRIBUTIONAL SHAPE; E-MODEL; HARD BREAKDOWN; HIGH FIELD; LOW FIELD; LOW-K; OPERATING FIELDS; POROUS LOW-K MATERIAL; SINGLE DAMASCENE STRUCTURES; SOFT BREAKDOWN; SPACING VARIATIONS; STATISTICAL SIGNIFICANCE; TDDB; TIME DEPENDENT DIELECTRIC BREAKDOWN; TIME-DIFFERENCES;

ELECTRIC BREAKDOWN;

DIELECTRIC MATERIALS;

EID: 77957898065     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488772     Document Type: Conference Paper

References (22)

1. R. Tsu, J. W. McPherson and W. R. McKee, "Leakage and breakdown reliability issues associated with low-k dielectrics in a dual-damascene Cu process", IEEE Int. Reliability Physics Symposium (IRPS), p. 348, 2000
2. G. S. Haase, E. T. Ogawa and J. W. McPherson, "Breakdown Characteristics of interconnect dieletrics", IEEE Int. Reliability Physics Symposium (IRPS), p. 466, 2005
3. W. Wu, X. Duan and J. S. Yuan, "A physical model of time-dependent dielectric breakdown in copper metallization", IEEE Int. Reliability Physics Symposium (IRPS), p. 282, 2003
4. J. Kim, E. T. Ogawa and J. W. McPherson, "Time dependent dielectric breakdown characteristics of low-k dielectric (SiOC) over a wide range of test areas and electric fields", IEEE Int. Reliability Physics Symposium (IRPS), p. 399, 2007
5. J. W. McPherson and H. C. Mogul, "Underlying physics of the thermochemical E model in describing low-field timedependent dielectric breakdown in SiO2 thin films," Journal of Applied Physics, Vol. 84, p. 1513, 1998
6. F. Chen, O. Bravo, K. Chanda, P. McLaughlin, T. Sullivan, J. Gill1, J. Lloyd, R. Kontra and J. Aitken, "A comprehensive study of low-k SiCOH TDDB phenomena and its reliability lifetime model development", IEEE Int. Reliability Physics Symposium (IRPS), p. 46, 2006
7. N. Suzumura, S. Yamamoto, D. Kodama, K. Makabe, J. Komori, E. Murakami, S. Maegawa and K. Kubota, "A new TDDB degradation model based on Cu ion drift in Cu interconnect dielectrics", IEEE Int. Reliability Physics Symposium (IRPS), p. 484, 2006
8. J. R. Lloyd, E. Liniger and T. M. Shaw, "Simple model for time-dependent dielectric breakdown in inter- and intralevel low-k dielectrics", Journal of Applied Physics, Vol. 98, p. 084109, 2005
9. G. S. Haase, "A model for electric degradation of interconnect low-k dielectrics in microelectronic integrated circuits", Journal of Applied Physics, Vol. 105, p. 044908, 2009
10. I. C. Chen, S. Holland and C. Hu, "A quantitative model for time-dependent breakdown in SiO2", IEEE Int. Reliability Physics Symposium (IRPS), p. 24, 1985
11. J. W. McPherson, R. B. Khamankar and A. Shanware, "Complementary model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics", Journal of Applied Physics, Vol. 88, p. 5351. 2000
12. J. Suñé and E. Wu, "A New Quantitative Hydrogen-Based Model for Ultra-Thin Oxide Breakdown", Digest of Technical Papers on Symposium on VLSI Technology, p.97, 2001
13. E. Wu, J. Suñé, W. Lai, A. Vayshenker and D. Harmon, "A Comprehensive Investigation of Gate Oxide Breakdown of P+Poly/PFETs Under Inversion Mode", Technical Digest of the International Electron Devices Meeting (IEDM), p. 339, 2005
14. F. Chen, J. Gambino, M. Shinosky, B. Li, O. Bravo, M. Angyal, D. Badami, and J. Aitken, "Correlation between I-V Slope and TDDB Voltage Acceleration for Cu/Low-k Interconnects", International Interconnect Technology Conference (IITC), p. 182, 2009
15. N. Suzumura, S. Yamamoto, D. Kodama, H. Miyazaki, M. Ogasawara, J. Komori and E. Murakami, "Electric-field and temperature dependencies of TDDB Degradation in Cu/low-k damascene structures", IEEE Int. Reliability Physics Symposium (IRPS), p. 138, 2008
16. M. Pantouvaki, H. Struyf, D. Hendrickx, N. Heylen, O. Richard and G. P. Beyer, "The impact of ash on TDDB of metal-hard-mask-etched Cu/low-k interconnects", Proceedings of the Advanced Metallization Conference (AMC), p. 733, 2008
17. J. Van Olmen, A. Al-Bayati, G. P. Beyer, P. Boelen, L. Carbonell, C. Zhao, I. Ciofi, M. Claes, A. Cockburn, G. Druais, D. Hendrickx, N. Heylen, E. Kesters, S. Lytle, A. Noori, M. Op de Beeck, H. Struyf, Zs. Tokei and J. Versluijs, "Integration of 50nm half pitch single damascene copper trenches in BDII by means of double patterning 193nm immersion lithography on metal hardmask", Proceedings of the Advanced Metallization Conference (AMC), p. 355, 2007
18. K. Croes, G. Cannatá, L. Zhao and Zs. Tokei, "Study of copper drift during TDDB of intermetal dielectrics by using fully passivated MOS capacitors as test vehicle", Microelectronics Reliability, Vol. 48, p. 1384, 2008
19. F. Chen, B. Li, J. Gambino, S. Mongeon, P. Pokrinchak, J. Aitken, D. Badami, M. Angyal, R. Achanta, G. Bonilla, G. Yang, G., P. Liu, K. Li, J. Sudijono, Y. Tan, T. J. Tang and C. Child, "Critical Ultra Low-k TDDB Reliability Issues For Advanced CMOS Technologies", IEEE Int. Reliability Physics Symposium (IRPS), p. 464, 2009
20. rd Edition, 1990
21. J. Kim, E. T. Ogawa and J. W. McPherson, "Time Dependent Dielectric Breakdown Characteristics of Low-k Dielectric (SiOC) Over a Wide Range of Test reas and Electric Fields", IEEE Int. Reliability Physics Symposium (IRPS), p. 399, 2007
22. M. Vilmay, D. Roy, C. Monget, F. Volpi, J.-M. Chaix, "Copper line topology impact on the SiOCH low-k reliability in sub 45nm technology node", IEEE Int. Reliability Physics Symposium (IRPS), p. 606, 2009