Fundamental understanding of porous low-k dielectric breakdown

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 481-485

  Lee, Shou Chung ^a,b   Oates, A S ^a   Chang, Kow Ming ^b  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTIC MODELS; ELECTRIC FIELD ENHANCEMENT; FAILURE DISTRIBUTIONS; FAILURE TIME; FIELD ACCELERATION; FIELD DEPENDENCE; HIGH FIELD; LOW FIELD; LOW K DIELECTRICS; NON-LINEAR; PERCOLATION PATH; PERCOLATION THEORY; POROUS LOW-K DIELECTRICS; POTENTIAL MECHANISM; STRESS CONDITION;

DIELECTRIC MATERIALS; ELECTRIC FIELDS; RELIABILITY; SILICA; SOLVENTS;

POROSITY;

EID: 70449095836     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173300     Document Type: Conference Paper

References (13)

1. Junji Noguchi, et al., IRPS, 2001, pp. 355-359
2. J. Kim, E. T. Ogawa and J. W. McPherson, IRPS, 2006, pp. 478-483
3. E. T. Ogawa, et al., IRPS, 2003, pp. 166-172
4. Changsoo Hong and Linda Milor., ISSM, 2005, pp. 434-437
5. F. Chen, et al., IRPS, 2006, pp. 46-53
6. N. Suzumura , et al., IRPS, 2006, pp. 484-489.
7. J. R. Lloyd, et al, Microelectronics Reliability, 2006, Vol. 46, pp.1643-1647
8. T. Saito, et al, Transactions on Electron Devices, 2004, Vol. 51, No.12, pp. 2129-2135
9. R. S. Achanta, et al, Journal of Applied Physics, 2008, 103, 014907
10. H. J. Lee, et al, IITC, 2003, pp. 103-105
11. S. S., Hwang, IRPS, 2005, pp. 474-477
12. R. S. Achanta, et al, American Vacuum Society, 2008, pp. 1497-1500
13. Jordi Sune, Electron Device Letters, 2001, Vol. 22, No.6, pp. 296-298