SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 37-38, Issue , 1997, Pages 181-187

Dielectric barriers for Cu metallization systems

(4) Vogt, M a Kachel, M a Plotner M a Drescher, K a

a DRESDEN UNIVERSITY OF TECHNOLOGY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; COPPER; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; ELECTRIC CURRENT MEASUREMENT; LEAKAGE CURRENTS; METALLIZING; SEMICONDUCTING FILMS; SILICON NITRIDE; THERMAL STRESS; VOLTAGE MEASUREMENT;

ELECTRICAL STRESS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); TIME TO FAILURE (TTF);

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0031270332 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-9317(97)00110-X Document Type: Article

Times cited : (41)

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