Critical reliability challenges in scaling SiO2-based dielectric to its limit

Microelectronics Reliability

Volumn 43, Issue 8, 2003, Pages 1175-1184

  Wu, E Y ^a   Sune J ^b   Lai, W ^a   Vayshenker, A ^a   Nowak, E ^a   Harmon, D ^a  

^a IBM MICROELECTRONICS   (United States)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC DEVICES; GATES (TRANSISTOR); IONIZATION; THICKNESS CONTROL; TRANSMISSION ELECTRON MICROSCOPY;

GATE INSULATORS;

SILICA;

EID: 0042164631     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00169-0     Document Type: Conference Paper

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