High quality amorphous-crystalline silicon heterostructure prepared by grid-biased remote radio-frequency plasma enhanced chemical vapor deposition

Journal of Non-Crystalline Solids

Volumn 358, Issue 23, 2012, Pages 3396-3402

  Mahtani, Pratish ^a   Leong, Keith R ^a   Jovet, Bastien ^a   Yeghikyan, Davit ^a   Kherani, Nazir P ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

Amorphous silicon; DC biased; Heterojunction; Passivation; RF PECVD

Indexed keywords

A-SI:H; CRYSTALLINE SILICONS; DC-BIASED; HIGH QUALITY; HYDROGEN CONTENTS; HYDROGENATED AMORPHOUS SILICON (A-SI:H) FILMS; MINORITY CARRIER LIFETIMES; PASSIVATING PROPERTIES; RADIO-FREQUENCY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REMOTE PLASMAS; REMOTE RF; RF ELECTRODES; RF-PECVD; SEMI-TRANSPARENT; SURFACE RECOMBINATION VELOCITIES;

CRYSTALLINE MATERIALS; FILM GROWTH; HETEROJUNCTIONS; METALLIC FILMS; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SILICON WAFERS; VAPORS;

AMORPHOUS SILICON;

EID: 84869014381     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2012.08.015     Document Type: Article

References (48)

1. M. Tanaka, M. Taguchi, T. Matsuyama, T. Sawada, S. Tsuda, S. Nakano, H. Hanafusa, and Y. Kuwano Development of new a-Si/c-Si heterojunction solar cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-layer) Jpn. J. Appl. Phys. 31 1992 3518 3522 (Pubitemid 23599992)
2. K. Wakisaka, M. Taguchi, T. Sawada, M. Tanaka, T. Matsuyama, T. Matsuoka, S. Tsuda, S. Nakano, Y. Kishi, and Y. Kuwano More than 16% solar cells with a new 'HIT' (doped a-Si/non-doped a-Si/crystalline Si) structure Proceeding of the 22nd IEEE Photovolt. Spec. Conf., Las Vagas, USA 1992 887 892
3. T. Mishima, M. Taguchi, H. Sakata, and E. Maruyama Development status of high-efficiency HIT solar cells Sol. Energy Mater. Sol. Cells 95 2011 18 21
4. B. Chhabra, R.L. Opila, and C.B. Honsberg 12.4% efficient freestanding 30 μm ultra-thin silicon solar cell using a-Si/c-Si heterostructure Proceedings of 35th IEEE Photovolt. Spec. Conf., Honolulu, HI 2010 1325 1329
5. D. Kray, and K.R. McIntosh Analysis of ultrathin high-efficiency silicon solar cells Phys. Status Solidi A 206 2009 1647 1654
6. S. De Wolf, B. Demaurex, A. Descoeudres, and C. Ballif Very fast light-induced degradation of a-Si:H/c-Si(100) interfaces Phys. Rev. B: Condens. Matter Mater. Phys. 83 2011 233301
7. M. Nath, P. Chatterjee, J. Damon-Lacoste, and P. Roca I Cabarrocas Criteria for improved open-circuit voltage in a-Si:H (N) c-Si (P) front heterojunction with intrinsic thin layer solar cells J. Appl. Phys. 103 2008 034506
8. M. Tucci, L. Serenelli, S. De Iuliis, and M. Izzi Characterization of SiNx/a-Si:H crystalline silicon surface passivation under UV light exposure Thin Solid Films 515 2007 7625 7628 (Pubitemid 47202043)
9. L. Zhao, H. Diao, X. Zeng, C. Zhou, H. Li, and W. Wang Comparative study of the surface passivation on crystalline silicon by silicon thin films with different structures Phys. B 405 2010 61 64
10. M. Tanaka, S. Okamoto, S. Tsuge, and S. Kiyama Development of HIT solar cells with more than 21% conversion efficiency and commercialization of highest performance hit modules Proceedings of 3rd World Conf. Photovolt. Energy Convers., Osaka, Japan 2003 955 958
11. C. Wu, Y. Zhou, G. Li, and F. Liu Influence of the initial transient state of plasma and hydrogen pre-treatment on the interface properties of a silicon heterojunction fabricated by PECVD J. Semicond. 32 2011 096001
12. Y. Tsunomura, Y. Yoshimine, M. Taguchi, T. Baba, T. Kinoshita, H. Kanno, H. Sakata, E. Maruyama, and M. Tanaka Twenty-two percent efficiency HIT solar cell Sol. Energy Mater. Sol. Cells 93 2009 670 673
13. J.H. Jeung, H.G. Lee, L. Teng, and W.A. Anderson Microwave plasma CVD of silicon nanocrystalline and amorphous silicon as a function of deposition conditions Mater. Res. Soc. Symp. Proc. 703 2002 393 398
14. B. Bahardoust, A. Chutinan, K. Leong, A.B. Gougam, D. Yeghikyan, T. Kosteski, N.P. Kherani, and S. Zukotynski Passivation study of the amorphous-crystalline silicon interface formed using DC saddle-field glow discharge Phys. Status Solidi A 207 2010 539 543
15. S.Y. Lien, and D.S. Wuu Simulation and fabrication of heterojunction silicon solar cells from numerical computer and hot-wire CVD Prog. Photovoltaics Res. Appl. 17 2009 489 501
16. M.R. Page, E. Iwaniczko, Y.Q. Xu, L. Roybal, F. Hasoon, Q. Wang, and R.S. Crandall Amorphous/crystalline silicon heterojunction solar cells with varying i-layer thickness Thin Solid Films 519 2011 4527 4530
17. J. Damon-Lacoste, L. Fesquet, S. Olibet, and C. Ballif Ultra-high quality surface passivation of crystalline silicon wafers in large area parallel plate reactor at 40 MHz Thin Solid Films 517 2009 6401 6404
18. B. Strahm, Y. Andrault, D. Bätzner, D. Lachenal, C. Guérin, M. Kobas, J. Mai, B. Mendes, T. Schulze, G. Wahli, and A. Buechel Uniformity and quality of monocrystalline silicon passivation by thin intrinsic amorphous silicon in a new generation plasma-enhanced chemical vapor deposition reactor Mater. Res. Soc. Symp. Proc. 1245 2010 31 36
19. G. Ganguly, and A. Matsuda A new deposition parameter to control the carrier drift mobility in a-Si:H J. Non-Cryst. Solids 198-200 1996 1003 1006 (Pubitemid 126372375)
20. S. Shimizu, A. Matsuda, and M. Kondo The determinants of hydrogen concentrations in hydrogenated amorphous silicon films prepared using a triode deposition system J. Appl. Phys. 101 2007 064911
21. S. Shimizu, A. Matsuda, and M. Kondo Stability of thin film solar cells having less-hydrogenated amorphous silicon i-layers Sol. Energy Mater. Sol. Cells 92 2008 1241 1244
22. H. Sonobe, A. Sato, S. Shimizu, T. Matsui, M. Kondo, and A. Matsuda Highly stabilized hydrogenated amorphous silicon solar cells fabricated by triode-plasma CVD Thin Solid Films 502 2006 306 310 (Pubitemid 43292492)
23. K. Kato, S. Iizuka, G. Ganguly, T. Ikeda, A. Matsuda, and N. Sato Electron and ion energy controls in a radio frequency discharge plasma with silane Jpn. J. Appl. Phys. 36 1997 4547 4550
24. J. Tauc Studies of the band tails in a-Si:H by photomodulation spectroscopy Sol. Energy Mater. 8 1982 259 267 (Pubitemid 13463569)
25. D.L. Wood, and J. Tauc Weak absorption tails in amorphous semiconductors Phys. Rev. B: Condens. Matter Mater. Phys. 5 1972 3144 3151
26. R.A. Sinton, and A. Cuevas Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data Appl. Phys. Lett. 69 1996 2510 2512 (Pubitemid 126595545)
27. W.B. Pollard, and G. Lucovsky Phonons in polysilane alloys Phys. Rev. B: Condens. Matter Mater. Phys. 26 1982 3172 3180
28. A.A. Langford, M.L. Fleet, B.P. Nelson, W.A. Lanford, and N. Maley Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon Phys. Rev. B: Condens. Matter Mater. Phys. 45 1992 13367 13377
29. E. Bhattacharya, and A.H. Mahan Microstructure and the light-induced metastability in hydrogenated amorphous silicon Appl. Phys. Lett. 52 1988 1587 1589
30. S.W. Lee, D.C. Heo, J.K. Kang, Y.B. Park, and S.W. Rhee Microcrystalline silicon film deposition from H2-He-SiH4 using remote plasma enhanced chemical vapor deposition J. Electrochem. Soc. 145 1998 2900 2904
31. M.Z. Burrows, U.K. Das, R.L. Opila, S. De Wolf, and R.W. Birkmire Role of hydrogen bonding environment in a-Si:H films for c-Si surface passivation J. Vac. Sci. Technol. 26 2008 683 687
32. S. Olibet, E. Vallat-Sauvain, and C. Ballif Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds Phys. Rev. B: Condens. Matter Mater. Phys. 76 2007 035326
33. N. Beck, N. Wyrsch, C. Hof, and A. Shah Mobility lifetime product - a tool for correlating a-Si:H film properties and solar cell performances J. Appl. Phys. 79 1996 9361 9368 (Pubitemid 126581315)
34. S. Tchakarov, U. Dutta, P. Roca i Cabarrocas, and P. Chatterjee Modeling of reverse bias dark currents in pin structures using amorphous and polymorphous silicon J. Non-Cryst. Solids 338-340 2004 766 771
35. M. Itoh, Y. Ishibashi, A. Masuda, and H. Matsumura High-stability hydrogenated amorphous silicon films for light-soaking prepared by catalytic CVD at high deposition rates Thin Solid Films 395 2001 138 141 (Pubitemid 32933879)
36. K. Koga, M. Kai, M. Shiratani, Y. Watanabe, and N. Shikatani Cluśter-suppressed plasma chemical vapor deposition method for high quality hydrogenated amorphous silicon films Jpn. J. Appl. Phys. 41 2002 L168 L170
37. A. Matsuda, M. Takai, T. Nishimoto, and M. Kondo Control of plasma chemistry for preparing highly stabilized amorphous silicon at high growth rate Sol. Energy Mater. Sol. Cells 78 2003 3 26
38. J.A. Schmidt, R.R. Koropecki, R. Arce, and R.H. Buitrago Annealing-induced effects on the stability of hydrogenated amorphous silicon J. Appl. Phys. 78 1995 5959 5964
39. J.K. Saha, B. Bahardoust, K. Leong, A.B. Gougam, N.P. Kherani, and S. Zukotynski Spectroscopic ellipsometry studies on hydrogenated amorphous silicon thin films deposited using DC saddle field plasma enhanced chemical vapor deposition system Thin Solid Films 519 2011 2863 2866
40. J.J.H. Gielis, B. Hoex, P.J. van den Oever, M.C.M. van de Sanden, and W.M.M. Kessels Silicon surface passivation by hot-wire CVD Si thin films studied by in situ surface spectroscopy Thin Solid Films 517 2009 3456 3460
41. J. Mitchell, D. MacDonald, and A. Cuevas Thermal activation energy for the passivation of the n-type crystalline silicon surface by hydrogenated amorphous silicon Appl. Phys. Lett. 94 2009 162102
42. A. Descoeudres, L. Barraud, S. De Wolf, B. Strahm, D. Lachenal, C. Guérin, Z.C. Holman, F. Zicarelli, B. Demaurex, J. Seif, J. Holovsky, and C. Ballif Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment Appl. Phys. Lett. 99 2011 123506
43. J. Ge, Z.P. Ling, J. Wong, T. Mueller, and A.G. Aberle Optimisation of intrinsic a-Si:H passivation layers in crystalline-amorphous silicon heterojunction solar cells Energy Procedia 15 2012 107 117
44. U.K. Das, M.Z. Burrows, M. Lu, S. Bowden, and R.W. Birkmire Surface passivation and heterojunction cells on Si (100) and (111) wafers using dc and rf plasma deposited Si:H thin films Appl. Phys. Lett. 92 2008
45. J.W.A. Schüttauf, C.H.M. van der Werf, I.M. Kielen, W.G.J.H.M. van Sark, J.K. Rath, and JR.E.I. Schropp Improving the performance of amorphous and crystalline silicon heterojunction solar cells by monitoring surface passivation J. Non-Cryst. Solids 358 2012 2245 2248 10.1016/j.jnoncrysol.2011.12.063
46. S. Jik Lee, S. Hwan Kim, D. Won Kim, K. Hyung Kim, B. Kyu Kim, and J. Jang Effect of hydrogen plasma passivation on performance of HIT solar cells Sol. Energy Mater. Sol. Cells 95 2011 81 83
47. S.K. Kim, J.C. Lee, S.J. Park, Y.J. Kim, and K.H. Yoon Effect of hydrogen dilution on intrinsic a-Si:H layer between emitter and Si wafer in silicon heterojunction solar cell Sol. Energy Mater. Sol. Cells 92 2008 298 301 (Pubitemid 350236750)
48. Q. Wang High-efficiency hydrogenated amorphous/crystalline Si heterojunction solar cells Philos. Mag. 89 2009 2587 2598