Electron and ion energy controls in a radio frequency discharge plasma with silane

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 7 SUPPL. B, 1997, Pages 4547-4550

  Kato, Kohgi ^a   Iizuka, Satoru ^a   Ganguly, Gautam ^b   Ikeda, Tohru ^b   Matsuda, Akihisa ^b   Sato, Noriyoshi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Electron and ion temperature control; Grid bias method; Hole drift mobility; Hydrogenated amorphous silicon; rf silane plasma

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ELECTRIC DISCHARGES; ELECTRON BEAMS; ION BEAMS; SILANES; SUBSTRATES; TEMPERATURE CONTROL;

ELECTRON ENERGY DISTRIBUTION FUNCTIONS; ELECTRON TEMPERATURE CONTROL; GRID BIAS METHOD; HOLE DRIFT MOBILITY; ION ENERGY DISTRIBUTION FUNCTIONS; ION TEMPERATURE CONTROL; PLASMA DISCHARGES;

PLASMAS;

EID: 0031177265     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.4547     Document Type: Article

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