Thermal activation energy for the passivation of the n -type crystalline silicon surface by hydrogenated amorphous silicon

Applied Physics Letters

Volumn 94, Issue 16, 2009, Pages

  Mitchell, Jonathon ^a   MacDonald, Daniel ^a   Cuevas, Andres ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; ANNEALING TIME; CRYSTALLINE SILICON SURFACES; CRYSTALLINE SILICON WAFERS; HYDROGEN DIFFUSIONS; HYDROGENATED AMORPHOUS SILICONS; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITIONS; POST DEPOSITIONS; SURFACE PASSIVATIONS; SURFACE REARRANGEMENTS; THERMAL ACTIVATION ENERGIES; THERMAL-ANNEALING; THIN-FILM LAYERS;

ACTIVATION ENERGY; AMORPHOUS SILICON; CARRIER LIFETIME; CRYSTALLINE MATERIALS; HYDROGEN; PASSIVATION; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SURFACE DIFFUSION;

SURFACE REACTIONS;

EID: 65449158975     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3120765     Document Type: Article

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