Influence of the initial transient state of plasma and hydrogen pre-treatment on the interface properties of a silicon heterojunction fabricated by PECVD

Journal of Semiconductors

Volumn 32, Issue 9, 2011, Pages

  Wu, Chunbo ^a   Zhou, Yuqin ^a   Li, Guorong ^a   Liu, Fengzhen ^a  

^a UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

hydrogen plasma pre treatment; initial transient state of plasma; interface properties; PECVD; silicon heterojunction

Indexed keywords

A-SI:H; EFFECT OF HYDROGEN; HYDROGEN PLASMAS; INITIAL STAGES; INTERFACE PROPERTIES; INTERFACE PROPERTY; INTERFACIAL PROPERTY; OPTIMAL TIME; PLASMA PROCESS; PRE-TREATMENT; SI SURFACES; SILICON HETEROJUNCTION; SILICON HETEROJUNCTIONS; TRANSIENT STATE;

CHEMICAL VAPOR DEPOSITION; ELECTRIC DISCHARGES; HYDROGEN; INTERFACES (MATERIALS); PASSIVATION; PLASMA DEPOSITION; PLASMA DIAGNOSTICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA STABILITY; PLASMAS; SILICON; VOLTAGE DIVIDERS;

HETEROJUNCTIONS;

EID: 80053329561     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/32/9/096001     Document Type: Article

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