Silicon surface passivation by hot-wire CVD Si thin films studied by in situ surface spectroscopy

Thin Solid Films

Volumn 517, Issue 12, 2009, Pages 3456-3460

  Gielis, J J H ^a   Hoex, B ^a   van den Oever, P J ^a   van de Sanden, M C M ^a   Kessels, W M M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Amorphous silicon; Epitaxial silicon; Hot wire deposition; In situ optical studies; Silicon wafer; Surface passivation

Indexed keywords

ATTENUATED TOTAL REFLECTION INFRARED SPECTROSCOPIES; CRYSTALLINE SILICONS; DEPTH PROFILES; EPITAXIAL SILICON; EX-SITU; H BONDINGS; HETEROJUNCTION SOLAR CELLS; HIGH EFFICIENCIES; HOT-WIRE CHEMICAL VAPOR DEPOSITIONS; HOT-WIRE CVD; HOT-WIRE DEPOSITION; IN SITU OPTICAL STUDIES; IN-SITU TECHNIQUES; LIFETIME SPECTROSCOPIES; NONLINEAR OPTICAL TECHNIQUES; REAR SURFACES; SECOND-HARMONIC GENERATIONS; SI FILMS; SI SUBSTRATES; SI-SI BONDS; SILICON SURFACES; SILICON THIN FILMS; SURFACE AND INTERFACE STATE; SURFACE PASSIVATION; SURFACE SPECTROSCOPIES; THICKNESS OF THE FILMS; TWO-PHOTON RESONANCES;

CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; DENDRITES (METALLOGRAPHY); FILM GROWTH; HARMONIC GENERATION; INFRARED SPECTROSCOPY; ION BOMBARDMENT; NONMETALS; OPTICAL PROPERTIES; PASSIVATION; PHOTOVOLTAIC CELLS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SOLAR CELLS; SPECTROSCOPIC ANALYSIS; SPECTROSCOPIC ELLIPSOMETRY; THIN FILMS; WAFER BONDING; WIRE;

AMORPHOUS SILICON;

EID: 64349085182     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.076     Document Type: Article

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