A new deposition parameter to control the carrier drift mobility in a-Si:H

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 1003-1006

  Ganguly, Gautam ^a   Matsuda, Akihisa ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Drift mobility; Floating potential; Glow discharge; Ion bombardment energy; Time of flight

Indexed keywords

DEPOSITION; ELECTRIC CORONA; ELECTRIC DISCHARGES; ELECTRON TRANSPORT PROPERTIES; HYDROGENATION; ION BOMBARDMENT; PLASMA APPLICATIONS; PROBES;

CARRIER DRIFT MOBILITY; FLOATING POTENTIAL; TIME OF FLIGHT;

AMORPHOUS SILICON;

EID: 0030563550     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00022-1     Document Type: Article

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