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Volumn 358, Issue 17, 2012, Pages 2245-2248
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Improving the performance of amorphous and crystalline silicon heterojunction solar cells by monitoring surface passivation
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Author keywords
Doping; Heterojunction; Silicon; Solar cell; Surface passivation
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Indexed keywords
A-SI:H;
CRYSTALLINE SILICON SURFACES;
CRYSTALLINE SILICONS;
DEVICE PERFORMANCE;
DOPED FILMS;
INJECTION LEVELS;
LAYER STACKS;
MINORITY CARRIER LIFETIMES;
P-TYPE;
PASSIVATING PROPERTIES;
SILICON HETEROJUNCTIONS;
SURFACE PASSIVATION;
TEMPERATURE RANGE;
THERMAL-ANNEALING;
ANNEALING;
CRYSTALLINE MATERIALS;
DETERIORATION;
DOPING (ADDITIVES);
EPITAXIAL GROWTH;
HETEROJUNCTIONS;
PASSIVATION;
SEMICONDUCTOR DOPING;
SILICON;
SOLAR CELLS;
AMORPHOUS SILICON;
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EID: 84865785804
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2011.12.063 Document Type: Conference Paper |
Times cited : (27)
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References (27)
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