Cluśter-suppressed plasma chemical vapor deposition method for high quality hydrogenated amorphous silicon films

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 2 B, 2002, Pages

  Koga, Kazunori ^a   Kai, Motohide ^a   Shiratani, Masaharu ^a,b   Watanabe, Yukio ^a   Shikatani, Nobuhiro ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b FUKUOKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Amorphous silicon; Cluster; Light induced defect; Microstructure parameter; Plasma CVD; rf discharge; Silane

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; DEFECTS; HYDROGENATION; MICROSTRUCTURE; SILANES; SOLAR CELLS; THERMOPHORESIS;

DOUBLE PULSE DISCHARGE (DPD);

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 0037085217     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.L168     Document Type: Article

References (9)