Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds

Physical Review B - Condensed Matter and Materials Physics

Volumn 76, Issue 3, 2007, Pages

  Olibet, Sara ^a   Vallat Sauvain, Evelyne ^a   Ballif, Christophe ^a  

^a UNIVERSITY OF NEUCHÂTEL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34547093404     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.76.035326     Document Type: Article

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