-
1
-
-
0036540517
-
Interface recombination in heterojunctions of amorphous and crystalline silicon
-
A. Froitzheim, K. Brendel, L. Elstner, W. Fuhs, K. Kliefoth, and M. Schmidt Interface recombination in heterojunctions of amorphous and crystalline silicon J. Non-Cryst. Solids 299302 2002 663 667
-
(2002)
J. Non-Cryst. Solids
, vol.299-302
, pp. 663-667
-
-
Froitzheim, A.1
Brendel, K.2
Elstner, L.3
Fuhs, W.4
Kliefoth, K.5
Schmidt, M.6
-
2
-
-
34547581189
-
The optimization of interfacial properties of nc-Si:H/c-Si solar cells in hot-wire chemical vapor deposition process
-
Q. Zhang, M. Zhu, F. Liu, and Y. Zhou The optimization of interfacial properties of nc-Si:H/c-Si solar cells in hot-wire chemical vapor deposition process J. Mater. Sci. Mater. Electron. 18 2007 S33 S36
-
(2007)
J. Mater. Sci. Mater. Electron.
, vol.18
-
-
Zhang, Q.1
Zhu, M.2
Liu, F.3
Zhou, Y.4
-
3
-
-
66549096443
-
Twenty-two percent efficiency HIT solar cell
-
Y. Tsunomura, Y. Yoshimine, M. Taguchi, T. Baba, T. Kinoshita, H. Kanno, H. Sakata, E. Maruyama, and M. Tanaka Twenty-two percent efficiency HIT solar cell Sol. Energy Mater. Sol. Cells 93 2009 670 673
-
(2009)
Sol. Energy Mater. Sol. Cells
, vol.93
, pp. 670-673
-
-
Tsunomura, Y.1
Yoshimine, Y.2
Taguchi, M.3
Baba, T.4
Kinoshita, T.5
Kanno, H.6
Sakata, H.7
Maruyama, E.8
Tanaka, M.9
-
5
-
-
0034268858
-
Surface passivation of crystalline silicon solar cells A Review
-
A.G. Aberle Surface passivation of crystalline silicon solar cells A Review Prog. Photovolt.: Res. Appl. 8 2000 473 487
-
(2000)
Prog. Photovolt.: Res. Appl.
, vol.8
, pp. 473-487
-
-
Aberle, A.G.1
-
6
-
-
0000652939
-
Plasma-enhanced chemical-vapor-deposited oxide for low surface recombination velocity and high effective lifetime in silicon
-
Z. Chen, S.K. Pang, K. Yasutake, and A. Rohatgi Plasma-enhanced chemical-vapor-deposited oxide for low surface recombination velocity and high effective lifetime in silicon J. Appl. Phys. 74 1993 2856 2860
-
(1993)
J. Appl. Phys.
, vol.74
, pp. 2856-2860
-
-
Chen, Z.1
Pang, S.K.2
Yasutake, K.3
Rohatgi, A.4
-
7
-
-
27944483792
-
An approach for the higher efficiency in the HIT cells
-
Conference Record of the 31st IEEE Photovoltaic Specialists Conference - 2005
-
M. Taguchi, H. Sakata, Y. Yoshimine, E. Maruyama, A. Terakawa, M. Tanaka, An approach for the higher efficiency in the HIT cells, in: Proceedings of the 31st IEEE Photovoltaic Specialists Conference, FL, 2005, pp. 866871. (Pubitemid 41667923)
-
(2005)
Conference Record of the IEEE Photovoltaic Specialists Conference
, pp. 866-871
-
-
Taguchi, M.1
Sakata, H.2
Yoshimine, Y.3
Maruyama, E.4
Terakawa, A.5
Tanaka, M.6
Kiyama, S.7
-
9
-
-
0036948749
-
Very low surface recombination velocities on p- and n-type silicon wafers passivated with hydrogenated amorphous silicon films
-
New Orleans
-
S. Dauwe, J. Schmidt, R. Hezel, Very low surface recombination velocities on p- and n-type silicon wafers passivated with hydrogenated amorphous silicon films, in: Proceedings of the 29th IEEE Photovoltaic Specialists Conference, New Orleans, 2002, pp. 12461249.
-
(2002)
Proceedings of the 29th IEEE Photovoltaic Specialists Conference
, pp. 1246-1249
-
-
Dauwe, S.1
Schmidt, J.2
Hezel, R.3
-
10
-
-
67349123346
-
Advances in a-Si:H/c-Si heterojunction solar cell fabrication and characterization
-
L. Korte, E. Conrad, H. Angermann, R. Stangl, and M. Schmidt Advances in a-Si:H/c-Si heterojunction solar cell fabrication and characterization Sol. Energy Mater. Sol. Cells 93 2009 905 910
-
(2009)
Sol. Energy Mater. Sol. Cells
, vol.93
, pp. 905-910
-
-
Korte, L.1
Conrad, E.2
Angermann, H.3
Stangl, R.4
Schmidt, M.5
-
11
-
-
0026943048
-
Development of new a-Si/c-Si heterojunction solar cells: ACJ-HIT (artificially constructed junctionheterojunction with intrinsic thin-layer)
-
M. Tanaka, M. Taguchi, T. Matsuyama, T. Sawada, S. Tsuda, S. Nakano, H. Hanafusa, and Y. Kuwano Development of new a-Si/c-Si heterojunction solar cells: ACJ-HIT (artificially constructed junctionheterojunction with intrinsic thin-layer) Jpn. J. Appl. Phys. 31 1992 3518 3522
-
(1992)
Jpn. J. Appl. Phys.
, vol.31
, pp. 3518-3522
-
-
Tanaka, M.1
Taguchi, M.2
Matsuyama, T.3
Sawada, T.4
Tsuda, S.5
Nakano, S.6
Hanafusa, H.7
Kuwano, Y.8
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