Comparative study of the surface passivation on crystalline silicon by silicon thin films with different structures

Physica B: Condensed Matter

Volumn 405, Issue 1, 2010, Pages 61-64

  Zhao, Lei ^a   Diao, Hongwei ^a   Zeng, Xiangbo ^b   Zhou, Chunlan ^a   Li, Hailing ^a   Wang, Wenjing ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

HIT solar cell; Silicon thin film; Surface passivation

Indexed keywords

AMORPHOUS SILICON (A-SI:H); COMPARATIVE STUDIES; CRYSTALLINE SI; CRYSTALLINE SILICONS; DIFFERENT STRUCTURE; H-CONTENT; HETEROJUNCTION WITH INTRINSIC THIN LAYERS; MINORITY CARRIER LIFETIMES; PASSIVATION EFFECT; PHOTOCONDUCTIVE DECAY; SI-H BONDS; SILICON THIN FILM; SOLAR CELL SILICON; SURFACE PASSIVATION;

CARRIER LIFETIME; DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HETEROJUNCTIONS; MICROCRYSTALLINE SILICON; NANOCRYSTALLINE SILICON; PASSIVATION; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SOLAR CELLS; THIN FILM DEVICES; THIN FILMS;

AMORPHOUS SILICON;

EID: 71849096102     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.024     Document Type: Article

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