Ultra-high quality surface passivation of crystalline silicon wafers in large area parallel plate reactor at 40 MHz

Thin Solid Films

Volumn 517, Issue 23, 2009, Pages 6401-6404

  Damon Lacoste, J ^a   Fesquet, L ^a   Olibet, S ^a   Ballif, C ^a  

^a UNIVERSITY OF NEUCHÂTEL   (Switzerland)

Author keywords

Heterojunction; Lifetime measurements; Plasma processing and deposition; Solar cells

Indexed keywords

A-SI:H; CRYSTALLINE SILICON WAFERS; DEPOSITION SYSTEMS; EFFECTIVE-LIFETIME MEASUREMENTS; HETEROJUNCTION SOLAR CELLS; HIGH EFFICIENCY; HYDROGEN DILUTION; LIFETIME MEASUREMENTS; OPEN-CIRCUIT VOLTAGES; P-TYPE; PARALLEL PLATE REACTORS; PLASMA PROCESSING AND DEPOSITION; SI WAFER; ULTRA-HIGH;

CELL MEMBRANES; HYDROGEN; PASSIVATION; PHOTOVOLTAIC CELLS; PLASMA DEPOSITION; PLASMA DEVICES; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SOLAR CELLS;

SILICON WAFERS;

EID: 68349122705     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.02.066     Document Type: Article

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