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Volumn 519, Issue 9, 2011, Pages 2863-2866
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Spectroscopic ellipsometry studies on hydrogenated amorphous silicon thin films deposited using DC saddle field plasma enhanced chemical vapor deposition system
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Author keywords
DC saddle field; Hydrogenated amorphous silicon; Spectroscopic ellipsometry
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Indexed keywords
A-SI:H;
BONDED HYDROGEN;
COMPLEX DIELECTRIC FUNCTIONS;
CRYSTALLINE SILICON SUBSTRATES;
DC SADDLE FIELD;
DEPOSITION TEMPERATURES;
ENERGY RANGES;
HYDROGEN CONTENTS;
HYDROGENATED AMORPHOUS SILICON;
HYDROGENATED AMORPHOUS SILICON (A-SI:H);
HYDROGENATED AMORPHOUS SILICON THIN FILMS;
INTERFACE PROPERTY;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEMS;
ROOM TEMPERATURE;
SILICON BONDING;
SUBSTRATE TEMPERATURE;
AMORPHOUS FILMS;
DEPOSITION;
HYDROGEN;
HYDROGENATION;
METALLIC FILMS;
PLASMA DEPOSITION;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
POLYCRYSTALLINE MATERIALS;
SEMICONDUCTING SILICON COMPOUNDS;
SPECTROSCOPIC ELLIPSOMETRY;
SUBSTRATES;
THIN FILMS;
VAPOR DEPOSITION;
AMORPHOUS SILICON;
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EID: 79952618608
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2010.12.074 Document Type: Article |
Times cited : (11)
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References (32)
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