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Volumn 519, Issue 9, 2011, Pages 2863-2866

Spectroscopic ellipsometry studies on hydrogenated amorphous silicon thin films deposited using DC saddle field plasma enhanced chemical vapor deposition system

Author keywords

DC saddle field; Hydrogenated amorphous silicon; Spectroscopic ellipsometry

Indexed keywords

A-SI:H; BONDED HYDROGEN; COMPLEX DIELECTRIC FUNCTIONS; CRYSTALLINE SILICON SUBSTRATES; DC SADDLE FIELD; DEPOSITION TEMPERATURES; ENERGY RANGES; HYDROGEN CONTENTS; HYDROGENATED AMORPHOUS SILICON; HYDROGENATED AMORPHOUS SILICON (A-SI:H); HYDROGENATED AMORPHOUS SILICON THIN FILMS; INTERFACE PROPERTY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEMS; ROOM TEMPERATURE; SILICON BONDING; SUBSTRATE TEMPERATURE;

EID: 79952618608     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.12.074     Document Type: Article
Times cited : (11)

References (32)
  • 15
    • 0003693462 scopus 로고
    • Cambridge University Press
    • Numerical receipes 1986 Cambridge University Press 523
    • (1986) Numerical Receipes , pp. 523
  • 32
    • 79952619202 scopus 로고    scopus 로고
    • http://rsb.info.nih.gov/ij/docs/


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.