Passivation study of the amorphous-crystalline silicon interface formed using DC saddle-field glow discharge

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 3, 2010, Pages 539-543

  Bahardoust, Barzin ^a   Chutinan, Alongkarn ^a   Leong, Keith ^a   Gougam, Adel B ^b   Yeghikyan, Davit ^a   Kosteski, Tome ^a   Kherani, Nazir P ^a   Zukotynski, Stefan ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b Arise Technologies Corporation   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; CRYSTALLINE SILICONS; EFFECTIVE LIFETIME; GLOW DISCHARGE METHOD; HETEROSTRUCTURES; INTERFACE DEFECTS; MINORITY CARRIER; MINORITY CARRIER CONCENTRATION; MINORITY CARRIER LIFETIMES; PROCESS TEMPERATURE; RECOMBINATION MODEL; SI SURFACES; SI WAFER; SURFACE PASSIVATION;

CARRIER CONCENTRATION; CARRIER LIFETIME; DEFECT DENSITY; ELECTRIC FIELDS; GLOW DISCHARGES; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SURFACE DEFECTS;

AMORPHOUS SILICON;

EID: 77951010039     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200982803     Document Type: Article

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