Modeling of reverse bias dark currents in pin structures using amorphous and polymorphous silicon

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 766-771

  Tchakarov, S ^a   Dutta, U ^b   Roca i Cabarrocas, P ^a   Chatterjee, P ^b  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

DISSOCIATION; ELECTROOPTICAL DEVICES; LEAKAGE CURRENTS; MATHEMATICAL MODELS; POISSON EQUATION; POLYSILICON; SILANES; THICKNESS MEASUREMENT; THIN FILMS;

DARK CURRENT; DENSITY OF STATES (DOS); THERMAL GENERATION;

SOLAR CELLS;

EID: 2942592249     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.03.087     Document Type: Conference Paper

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