Microwave plasma CVD of silicon nanocrystalline and amorphous silicon as a function of deposition conditions

Materials Research Society Symposium - Proceedings

Volumn 703, Issue , 2002, Pages 393-398

  Jeung, J H ^a   Lee, Hak Gue ^a   Teng, Lihong ^a   Anderson, W A ^a  

^a State University of New York   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; NANOSTRUCTURED MATERIALS; OHMIC CONTACTS; PHOTOCONDUCTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILANES; SOLAR CELLS; SUBSTRATES; THIN FILM TRANSISTORS; THIN FILMS;

DARK CONDUCTIVITY; HETEROJUNCTION SOLAR CELL; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION; NANOCRYSTALLINE SILICON; RESIDUAL GAS ANALYZER;

AMORPHOUS SILICON;

EID: 0036353929     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)