Criteria for improved open-circuit voltage in a-Si:H (N) c-Si (P) front heterojunction with intrinsic thin layer solar cells

Journal of Applied Physics

Volumn 103, Issue 3, 2008, Pages

  Nath, Madhumita ^a   Chatterjee, P ^a   Damon Lacoste, J ^b   Roca I Cabarrocas, P ^b  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; HETEROJUNCTIONS; HYDROGENATION; LOW TEMPERATURE EFFECTS; MICROCRYSTALLINE SILICON; OPEN CIRCUIT VOLTAGE; SILICON WAFERS; THIN FILMS;

BACK SURFACE FIELD LAYERS; INTRINSIC THIN LAYER (HIT); TEMPERATURE DEPOSITION TECHNOLOGY;

SOLAR CELLS;

EID: 39349112869     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2838459     Document Type: Article

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