Optimisation of intrinsic a-Si:H passivation layers in crystalline- amorphous silicon heterojunction solar cells

Energy Procedia

Volumn 15, Issue , 2012, Pages 107-117

  Ge, J ^a   Ling, Z P ^a   Wong, J ^a   Mueller, T ^a   Aberle, A G ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

A Si:H; Amorphous silicon; Crystallinity; Heterojunction solar cell; Lifetime; Microcrystalline silicon; Optical bandgap

Indexed keywords

A-SI:H; AMORPHOUS SILICON (A-SI:H); C-SI SUBSTRATES; CRYSTALLINE SILICONS; CRYSTALLINITIES; DEPOSITION CONDITIONS; DEVICE STRUCTURES; DOPING EFFICIENCY; EFFECTIVE LIFETIME; EMITTER LAYERS; FILM CHARACTERISTICS; FILM PROPERTIES; GAS-FLOW RATIO; HETEROJUNCTION SOLAR CELLS; INJECTION LEVELS; INTERFACIAL DEFECT; LIFETIME; LIFETIME TESTS; OPTIMISATIONS; PASSIVATION LAYER; SILICON HETEROJUNCTIONS;

AMORPHOUS SILICON; HETEROJUNCTIONS; HYDROGEN BONDS; MICROCRYSTALLINE SILICON; NANOSTRUCTURED MATERIALS; OPTICAL BAND GAPS; PASSIVATION; PHOSPHORUS; SEMICONDUCTOR DOPING;

SILICON WAFERS;

EID: 84860532791     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2012.02.013     Document Type: Conference Paper

References (27)

1. Ling ZP, GE J, Mueller T, Wong J, Aberle AG. Optimisation of p-doped μc-Si:H emitter layers in crystalline-amorphous silicon heterojunction solar cells. Proc. International Conf. on Materials for Advanced Technologies 2011, Symposium O, Singapore; Energy Procedia, 2011.
2. Mishima T, Taguchi M, Sakata H, Maruyama E. Development status of high-efficiency HIT solar cells. Sol. Energy Mat. Sol. Cells 2011; 95:18-21.
3. Pysch DMB, Zimmermann K, Schetter C, Hermle M, Glunz SW. Comprehensive study of different PECVD deposition methods for deposition of thin intrinsic amorphous silicon for heterojunction solar cells. Proc. 24th European Photovoltaic Solar Energy Conf., Hamburg, Germany; 2009, p. 1580-5.
4. Schüttauf JWA, Van Der Werf KHM, Kielen IM, Van Sark WGJHM, Rath JK, Schropp REI. Excellent crystalline silicon surface passivation by amorphous silicon irrespective of the technique used for chemical vapor deposition. Appl. Phys. Lett. 2011; 98:153514.
5. Nagel H, Berge C, Aberle AG. Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors. J. Appl. Phys. 1999; 86:6218-21. (Pubitemid 129647838)
6. Tauc J. Optical properties and electronic structure of amorphous Ge and Si. Mat. Res. Bull. 1968; 3:37-46.
7. Cody GD, Wronski CR, Abeles B, Stephens RB, Brooks B. Optical characterization of amorphous-silicon hydride films. Sol. Cells 1980; 2:227-43. (Pubitemid 11475502)
8. Daimaru T, Tabata A, Mizutani T. Structure of amorphous and microcrystalline silicon thin films prepared at various gas pressures and gas flow rates by hot-wire chemical vapor deposition. Thin Solid Films 2006; 501:102-6. (Pubitemid 43245568)
9. Rath JK, Schropp REI, Beyer W. Hydrogen at compact sites in hot-wire chemical vapour deposited polycrystalline silicon films. J. Non-Cryst. Solids 2000; 266-269:190-4.
10. Gracin D, Desnica U, Ivanda M. Microstructural properties of dc magnetron sputtered a-Si:H by IR spectroscopy. J. Non-Cryst. Solids 1992; 149:257-63. (Pubitemid 23583798)
11. Fujiwara H, Kondo M. Real-time monitoring and process control in amorphous/crystalline silicon heterojunction solar cells by spectroscopic ellipsometry and infrared spectroscopy. Appl. Phys. Lett. 2005; 86:032112.
12. Mueller T, Schwertheim S, Scherff M, Fahrner WR. High quality passivation for heterojunction solar cells by hydrogenated amorphous silicon suboxide films. Appl. Phys. Lett. 2008; 92:033504.
13. 3. Appl. Phys. Lett. 2006; 89:042112.
14. Honda S, Mates T, Ledinsky M, Oswald J, Fejfar A, Kocka J, Yamazaki T, Uraoka Y, Fuyuki T. Effect of hydrogen passivation on polycrystalline silicon thin films. Thin Solid Films 2005; 487:152-6. (Pubitemid 41042557)
15. Kessels WMM, Gielis JJH, Hoex B, van den Oever PJ, de Sanden MCMV. Silicon surface passivation by hot-wire CVD Si thin films studied by in situ surface spectroscopy. Thin Solid Films 2009; 517:3456-60.
16. Kim S-K, Lee JC, Park S-J, Kim Y-J, Yoon KH. Effect of hydrogen dilution on intrinsic a-Si:H layer between emitter and Si wafer in silicon heterojunction solar cell. Sol. Energy Mat. Sol. Cells 2008; 92:298-301. (Pubitemid 350236750)
17. Hao HY, Liao XB, Zeng XB, Diao HW, Xu Y, Kong GL. Structure, stability and photoelectronic properties of transition films from amorphous to microcrystalline silicon. J. Cryst. Growth 2005; 281:344-8. (Pubitemid 40973259)
18. Kroll U, Meier J, Torres P, Pohl J, Shah A. From amorphous to microcrystalline silicon films prepared by hydrogen dilution using the VHF (70 MHz) GD technique. J. Non-Cryst. Solids 1998; 227-230:68-72. (Pubitemid 128427080)
19. Hsiao JC, Chen CH, Lin CC, Wu DC, Yu P. Effect of hydrogen dilution on the intrinsic a-Si:H film of the heterojunction silicon-based solar cell. J. Electrochem. Soc. 2011; 158:H876-H878.
20. Dao VA, Duy NV, Heo J, Choi H, Kim Y, Lakshminarayan, Yi J. Hydrogenated amorphous silicon layer formation by inductively coupled plasma chemical vapor deposition and its application for surface passivation of p-type crystalline silicon. Jpn. J. Appl. Phys. 2009; 48: 066509.
21. Koch C, Ito M, Schubert M. Low-temperature deposition of amorphous silicon solar cells. Sol. Energy Mat. Sol. Cells 2001; 68:227-36. (Pubitemid 33649564)
22. Jeon M, Yoshiba S, Kamisako K. Hydrogenated amorphous silicon film as intrinsic passivation layer deposited at various temperatures using RF remote-PECVD technique. Curr. Appl. Phys. 2010; 10:S237-S240.
23. Kondo M, Matsui T, Nasuno Y, Sonobe H, Shimizu S. Key issues for fabrication of high quality amorphous and micro-crystalline silicon solar cells. Thin Solid Films 2006; 501:243-6. (Pubitemid 43245580)
24. De Wolf S, Kondo M. Boron-doped a-Si:H/c-Si interface passivation: Degradation mechanism. Appl. Phys. Lett. 2007; 91:112109.
25. Keppner H, Torres P, Fluckiger R, Meier J, Shah A, Fortmann C, Fath P, Willeke G, Happle K, Kiess H. Passivation properties of amorphous and microcrystalline silicon layers deposited by VHF-GD for crystalline silicon solar-cells. Sol. Energy Mat. Sol. Cells 1994; 34:201-9.
26. Strahm B, Andrault Y, Bätzner D, Lachenal D, Guérin C, Kobas M, Mai J, Mendes B, Schulze T, Wahli G, Buechel A. Uniformity and quality of monocrystalline silicon passivation by thin intrinsic amorphous silicon in a new generation plasma-enhanced chemical vapor deposition reactor. Proc. Material Research Soc. Spring Meeting, San Francisco, CA; 2010, vol. 1245, p. 31-6.
27. De Wolf S, Beaucarne G. Surface passivation properties of boron-doped plasma-enhanced chemical vapor deposited hydrogenated amorphous silicon films on p-type crystalline Si substrates. Appl. Phys. Lett. 2006; 88:1-3. (Pubitemid 43100109)