Amorphous/crystalline silicon heterojunction solar cells with varying i-layer thickness

Thin Solid Films

Volumn 519, Issue 14, 2011, Pages 4527-4530

  Page, M R ^a   Iwaniczko, E ^a   Xu, Y Q ^a   Roybal, L ^a   Hasoon, F ^a   Wang, Q ^a   Crandall, R S ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

Amorphous silicon; Catalytic CVD; Heterojunction; Hot wire deposition; Solar cell; Transient capacitance

Indexed keywords

AMORPHOUS SILICON (A-SI:H); CATALYTIC CVD; CZOCHRALSKI WAFERS; FILL FACTOR; HETEROJUNCTION SOLAR CELLS; HOLE TRANSPORTS; HOT WIRE CHEMICAL VAPOR DEPOSITION; HOT-WIRE DEPOSITION; I-LAYER; INTRINSIC LAYER; MINORITY-CARRIER COLLECTION; POTENTIAL BARRIERS; SILICON HETEROJUNCTIONS; TRANSIENT CAPACITANCE;

CAPACITANCE; CAPACITANCE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; MONOCRYSTALLINE SILICON; OPEN CIRCUIT VOLTAGE; POWER QUALITY; SILICON WAFERS; WIRE;

AMORPHOUS SILICON;

EID: 79958776158     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.293     Document Type: Conference Paper

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