In situ reaction mechanism studies on atomic layer deposition of Al xSiyOz from trimethylaluminium, hexakis(ethylamino)disilane, and water

Chemistry of Materials

Volumn 24, Issue 20, 2012, Pages 3859-3867

  Tomczak, Yoann ^a   Knapas, Kjell ^a   Haukka, Suvi ^b   Kemell, Marianna ^a   Heikkilä, Mikko ^a   Ceccato, Marcel ^c   Leskelä, Markku ^a   Ritala, Mikko ^a  

^a UNIVERSITY OF HELSINKI   (Finland)

^b ASM Microchemistry Oy   (Finland)

^c AARHUS UNIVERSITY   (Denmark)

Author keywords

aluminum silicon oxide; atomic layer deposition (ALD); energy dispersive X ray spectroscopy (EDX); fourier transform infrared spectroscopy (FT IR); quadrupole mass spectrometry (QMS); quartz crystal microbalance (QCM); X ray photoelectron spectroscopy (XPS)

Indexed keywords

ALUMINUM SILICONS; DISILANES; ENERGY DISPERSIVE X RAY SPECTROSCOPY; ENERGY DISPERSIVE X-RAY; FOURIER TRANSFORM INFRARED; HYDROXYLATED SURFACES; IN-SITU REACTIONS; METAL PRECURSOR; METHYL GROUP; METHYL LIGANDS; MODEL-BASED OPC; PRECURSOR MOLECULES; QCM AND XPS; QUADRUPOLE MASS SPECTROMETER; QUADRUPOLE MASS SPECTROMETRY; REACTION MECHANISM; SI ATOMS; SI-SI BONDS; SURFACE HYDROXYL GROUPS; SURFACE REACTIVITY; TRIMETHYLALUMINIUM; X RAY REFLECTIVITY;

ADSORPTION; ALUMINUM; ATOMIC LAYER DEPOSITION; BYPRODUCTS; CHEMICAL BONDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FUNCTIONAL GROUPS; LIGANDS; MASS SPECTROMETRY; PHOTOELECTRONS; QUARTZ CRYSTAL MICROBALANCES; SILICON OXIDES; SURFACE REACTIONS; X RAY PHOTOELECTRON SPECTROSCOPY; X RAY SPECTROSCOPY;

SILICON;

EID: 84867840955     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm301658m     Document Type: Article

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