Atomic layer deposition of hafnium silicate from HfCl4, SiCl4, and H2O

Electrochemical and Solid-State Letters

Volumn 10, Issue 5, 2007, Pages 149-152

  Fedorenko, Y ^a   Swerts, J ^a   Maes, J W ^a   Tois, E ^b   Haukka, S ^b,g   Wang, C G ^c   Wilk, G ^c   Delabie, A ^d,g   Deweerd, W ^d,e   De Gendt, S ^d,f,g  

^a ASM BELGIUM   (Belgium)

^b ASM Microchemistry Oy   (Finland)

^c ASM AMERICA   (United States)

^d IMEC   (Belgium)

^e INTEL CORPORATION   (United States)

^f UNIVERSITY OF LEUVEN   (Belgium)

^g ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ANALYSIS; ELECTROCHEMISTRY; FILM GROWTH; LEAKAGE CURRENTS; SILICON COMPOUNDS; THIN FILMS;

HAFNIUM SILICATE; PULSE SEQUENCES;

HAFNIUM COMPOUNDS;

EID: 33947318801     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2712051     Document Type: Article

References (31)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys., 89, 5243 (2001).
2. M. Ritala, in High-k Gate dielectrics, M. Houssa, Editor, p. 64, IOP, London (2004).
3. R. Puurunen, J. Appl. Phys., 96, 7686 (2005).
4. Z. M. Rittersma, F. Roozeboom, M. A. Verheijen, J. G. M. van Berkum, T. Dao, J. H. M. Snijders, E. Vainonen-Ahlgren, E. Tois, M. Tuominen, and S. Haukka, J. Electrochem. Soc., 151, C716 (2004).
5. M. A. Quevedo-Lopez, S. A. Krishnan, P. D. Kirsch, G. Pant, B. E. Gnade, and R. M. Wallace, Appl. Phys. Lett., 87, 262902 (2005).
6. Y. Senzaki, H. Chatham, S. Park, L. Bartholomew, T. Lo, Y. Okuyama, C. Barelli, C. Tousseau, T. Fleming, and B. Ford, ICICDT'04 Proceedings, p. 269, (2004).
7. M. Cho, R. Degraeve, G. Pourtois, A. Delabie, L.-A. Ragnarsson, T. Kauerauf, G. Groeseneken, S. De Gendt, M. Heyns, and C. S. Hwang, in Paper presented at AVS 6th International Conference on Atomic Layer Deposition, July 24-26, 2006, Seoul, Korea.
8. T. Ando, Jpn. J. Appl. Phys., Part 1, 45, 3165 (2006).
9. W. Tsai, Tech. Dig. - Int. Electron Devices Meet., 2003, 13.2.1.
10. L.-A. Ragnarsson, in VLSI Symp. Tech. Dig., p. 234, Kyoto, Japan (2005).
11. R. I. Hegde, Tech. Dig. - Int. Electron Devices Meet., 2005, 35.
12. D. H. Triyoso, R. I. Hegde, J. K. Schaeffer, D. Roan, P. J. Tobin, S. B. Samavedam, B. E. White, Jr., R. Gregory, and X.-D. Wang, Appl. Phys. Lett., 88, 222901 (2006).
13. J. R. Hauser and K. Ahmed, in Characterization and Metrology for ULSI Technology, p. 235, AIP, New York (1998).
14. M. A. Alan and M. L. Green, J. Appl. Phys., 94, 3403 (2003).
15. J. W. Klaus, A. W. Ott, J. M. Johnson, and S. M. George, Appl. Phys. Lett., 70, 1092 (1997).
16. K. Kukli, M. Ritala, M. Leskelä, T. Sajavaara, J. Keinonen, R. I. Hedge, D. C. Gilmer, and P. J. Tobin, J. Electrochem. Soc., 151, F98 (2004).
17. A. Delabie, M. Caymax, B. Brijs, D. P. Brunco, T. Conard, E. Sleeckx, S. Van Elshocht, L.-A. Ragnarsson, S. De Gendt, and M. M. Heyns, J. Electrochem. Soc., 153, F180 (2006).
18. R. K. Iler, The Chemistry of Silica: Solubility, Polymerization, Colloid and Surface Properties, and Biochemistry, p. 622, Wiley, New York (1979).
19. S. Haukka and A. Roots, J. Phys. Chem., 98, 1695 (1994).
20. M. Juppo, P. Aĺn, M. Ritala, and M. Leskelä, Chem. Vap. Deposition, 7, 211 (2001).
21. A. Delabie, J. Appl. Phys., 97, 064104 (2005).
22. P. Raghu, N. Rana, C. Yim, E. Shero, and F. Shadmana, J. Electrochem. Soc., 150, F186 (2003).
23. O. Sneh, M. L. Wise, A. W. Ott, L. A. Okada, and S. M. George, Surf. Sci., 334, 135 (1995).
24. J. W. Klaus, O. Sneh, and S. M. George, Science, 287, 1934 (1997).
25. A. Delabie, G. Pourtois, M. Caymax, S. De Gendt, L.-A. Ragnarsson, M. Heyns, Y. Fedorenko, J. Swerts, and J. W. Maes, J. Vac. Sci. Technol. B, Accepted.
26. P. Viruela-Martin, C. M. Zicovich-Wilson, and A. Corma, J. Phys. Chem., 97, 13713 (1993).
27. G. A. Jeffrey, An Introduction to Hydrogen Bonding, Oxford University Press, New York (1997).
28. J. W. Klaus and S. M. George, J. Electrochem. Soc., 147, 2658 (2000).
29. I. M. Iskandarova, A. A. Knizhnik, A. A. Bagatur'yants, B. V. Potapkin, and A. A. Korkin, Proc. SPIE, 5401, 457 (2004).
30. S. Haukka, E.-L. Lakomaa, and Tuomo Suntola, Appl. Surf. Sci., 82/83, 548 (1994).
31. J. Swerts, W. Deweerd, C.-G. Wang, Y. Fedorenko, A. Delabie, E. Shero, C. Zhao, J. W. Maes, S. De Gendt, and G. Wilk, Mater. Res. Soc. Symp. Proc., 917, 0917-E11-04 (2006).