High growth rate SiO2 by atomic layer deposition

ECS Transactions

Volumn 13, Issue 1, 2008, Pages 453-457

  Matero, Raija ^a   Haukka, Suvi ^a   Tuominen, Marko ^a  

^a ASM Microchemistry Oy   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

AMINOSILANE; ATOMIC LAYERS; HIGH GROWTH RATES; VAPOUR PRESSURES;

ATOMIC PHYSICS; ATOMS; LOGIC GATES; OZONE; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON COMPOUNDS; SILICON WAFERS; THICK FILMS; VAPOR PRESSURE;

ATOMIC LAYER DEPOSITION;

EID: 55649088439     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2911529     Document Type: Conference Paper

References (5)

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3. D. Hausmann, J. Becker, S. Wang, R. Gordon, Science, 298, 402 (2002).
4. R.Matero, S.Haukka, M. Tuominen, EMR-S 2007Fall Meeting,Warsaw, Poland.
5. T. Blomberg, R. Matero, A. Root, S. Haukka, MR-S 2008 Spring Meeting, San Francisco.